Paulo de Campos da Costa João, Assis Marcelo, Teodoro Vinícius, Rodrigues Andre, Cristina de Foggi Camila, San-Miguel Miguel Angel, Pereira do Carmo João Paulo, Andrés Juan, Longo Elson
Department of Electrical Engineering (SEL), University of São Paulo (USP) 13566-590 São Carlos Brazil.
Department of Chemistry, INCTMN, CDMF, Federal University of São Carlos (UFSCar) 13565-905 São Carlos Brazil
RSC Adv. 2020 Jun 8;10(37):21745-21753. doi: 10.1039/d0ra03179h.
This study demonstrates that the electron beam irradiation of materials, typically used in characterization measurements, could be employed for advanced fabrication, modification, and functionalization of composites. We developed irradiation equipment using an electron beam irradiation source to be applied in materials modification. Using this equipment, the formation of a thick Ag film on the AgPO semiconductor is carried out by electron beam irradiation for the first time. This is confirmed by various experimental techniques (X-ray diffraction, field-emission scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy) and molecular dynamics simulations. Our calculations demonstrate that, at the earlier stages, metallic Ag growth is initiated preferentially at the (110) surface, with the reduction of surface Ag cations forming metallic Ag clusters. As the (100) and (111) surfaces have smaller numbers of exposed Ag cations, the reductions on these surfaces are slower and are accompanied by the formation of O molecules.
本研究表明，通常用于表征测量的材料电子束辐照可用于复合材料的先进制造、改性和功能化。我们开发了一种使用电子束辐照源的辐照设备，用于材料改性。利用该设备，首次通过电子束辐照在AgPO半导体上形成了厚Ag膜。这通过各种实验技术（X射线衍射、场发射扫描电子显微镜、拉曼光谱和X射线光电子能谱）以及分子动力学模拟得到了证实。我们的计算表明，在早期阶段，金属Ag的生长优先在(110)表面开始，表面Ag阳离子还原形成金属Ag簇。由于(100)和(111)表面暴露的Ag阳离子数量较少，这些表面上的还原速度较慢，并伴随着O分子的形成。
