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层状氧碲化物BiCuTeO中轻微铜价态交替诱导的异常输运和磁性

Anomalous transport and magnetic properties induced by slight Cu valence alternation in layered oxytelluride BiCuTeO.

作者信息

Luo Ye-Cheng, Lin Dajun, Zhang Yan-Yan, Dong Song-Tao, Yao Shu-Hua, Lv Yang-Yang, Zhou Jian, Chen Y B

机构信息

National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University Nanjing 210093 China

National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University Nanjing 210093 China.

出版信息

RSC Adv. 2020 May 18;10(32):18753-18759. doi: 10.1039/d0ra02763d. eCollection 2020 May 14.

DOI:10.1039/d0ra02763d
PMID:35518304
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9053875/
Abstract

In this paper, we report on the transport and magnetic properties of layered oxytelluride BiCuTeO polycrystals with slight mixed valence of Cu. The temperature-dependent electrical resistivity reveals degenerate semiconductor behavior (similar to metals). Under the action of an external magnetic field, the BiCuTeO polycrystal sample exhibits unsaturated magnetic resistance (MR) of about 8% at 2 K and 9 Tesla. The Hall resistivities show nonlinear behavior, suggesting the coexistence of both electrons and holes in the sample. When the temperature is decreased to around 110 K, the dominant carriers are changed from electrons to holes from the viewpoint of electrical transport, which is supported by the calculated temperature-dependent Fermi energy. Meanwhile, at low temperatures (<100 K), the impurity magnetic moment formed by a small amount of positive divalent copper exhibits short-range magnetism (a spin-glass-like feature), which gives rise to a narrow magnetic hysteresis loop. Our work may benefit in-depth understanding of physical properties of BiCuTeO-based materials.

摘要

在本文中,我们报道了具有轻微铜混合价态的层状氧碲化物BiCuTeO多晶体的输运和磁性特性。随温度变化的电阻率揭示了简并半导体行为(类似于金属)。在外部磁场作用下,BiCuTeO多晶体样品在2 K和9特斯拉时表现出约8%的不饱和磁电阻(MR)。霍尔电阻率呈现非线性行为,表明样品中电子和空穴共存。从电输运的角度来看,当温度降至约110 K时,主导载流子从电子变为空穴,这一点得到了计算出的随温度变化的费米能的支持。同时,在低温(<100 K)下,由少量正二价铜形成的杂质磁矩表现出短程磁性(类似自旋玻璃的特征),这导致了一个狭窄的磁滞回线。我们的工作可能有助于深入理解基于BiCuTeO的材料的物理性质。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/840a/9053875/0ab489ef48cf/d0ra02763d-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/840a/9053875/b17b495dd8b6/d0ra02763d-f1.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/840a/9053875/e0b21c440430/d0ra02763d-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/840a/9053875/5bb070ff17d6/d0ra02763d-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/840a/9053875/0ab489ef48cf/d0ra02763d-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/840a/9053875/b17b495dd8b6/d0ra02763d-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/840a/9053875/49e6eaf29fe5/d0ra02763d-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/840a/9053875/a3f468bcba2e/d0ra02763d-f3.jpg
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Rationally Designing High-Performance Bulk Thermoelectric Materials.理性设计高性能块状热电材料。
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Dual Vacancies: An Effective Strategy Realizing Synergistic Optimization of Thermoelectric Property in BiCuSeO.双空位:一种实现 BiCuSeO 热电性能协同优化的有效策略。
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High thermoelectric performance realized in a BiCuSeO system by improving carrier mobility through 3D modulation doping.通过 3D 调制掺杂提高载流子迁移率,在 BiCuSeO 体系中实现高热电性能。
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