铜铟镓硒纳米线的阳离子交换合成及其在光电器件中的应用。

Cation exchange synthesis of CuIn Ga Se nanowires and their implementation in photovoltaic devices.

作者信息

Jia Guanwei, Wang Kun, Liu Baokun, Yang Peixu, Liu Jinhui, Zhang Weidong, Li Rongbin, Wang Chengduo, Zhang Shaojun, Du Jiang

机构信息

School of Physics and Electronics, Henan University Kaifeng 475004 China.

Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University Zhengzhou 450001 China

出版信息

RSC Adv. 2019 Nov 4;9(61):35780-35785. doi: 10.1039/c9ra04605d. eCollection 2019 Oct 31.

DOI:10.1039/c9ra04605d

PMID:35528051

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9074412/

Abstract

CuIn Ga Se (CIGS) nanowires were synthesized for the first time through an cation exchange reaction by using CuInSe (CIS) nanowires as a template material and Ga-OLA complexes as the Ga source. These CIGS nanowires maintain nearly the same morphology as CIS nanowires, and the Ga/In ratio can be controlled through adjusting the concentration of Ga-OLA complexes. The characteristics of adjustable band gap and highly effective light-absorbances have been achieved for these CIGS nanowires. The light-absorbing layer in photovoltaic devices (PVs) can be assembled by employing CIGS nanowires as a solar-energy material for enhancing the photovoltaic response. The highest power conversion efficiency of solar thin film semiconductors is more than 20%, achieved by the Cu(In Ga )Se (CIGS) thin-film solar cells. Therefore, these CIGS nanowires have a great potential to be utilized as light absorber materials for high efficiency single nanowire solar cells and to generate bulk heterojunction devices.

摘要

首次通过阳离子交换反应，以CuInSe（CIS）纳米线为模板材料、Ga-OLA配合物为Ga源合成了CuInGaSe（CIGS）纳米线。这些CIGS纳米线保持了与CIS纳米线几乎相同的形态，并且可以通过调整Ga-OLA配合物的浓度来控制Ga/In比。这些CIGS纳米线具有可调节带隙和高效光吸收的特性。通过使用CIGS纳米线作为太阳能材料来增强光伏响应，可以组装光伏器件（PV）中的光吸收层。Cu(InGa)Se（CIGS）薄膜太阳能电池实现了太阳能薄膜半导体的最高功率转换效率超过20%。因此，这些CIGS纳米线作为高效单纳米线太阳能电池的光吸收材料以及用于制备本体异质结器件具有巨大潜力。