Chen Ding-Rui, Chiu Sheng-Kuei, Wu Meng-Ping, Hsu Chia-Chen, Ting Chu-Chi, Hofmann Mario, Hsieh Ya-Ping
Graduate Institute of Opto-Mechatronics, National Chung Cheng University Chiayi 62102 Taiwan.
Institute of Atomic and Molecular Sciences, Academia Sinica Tainan 106 Taiwan
RSC Adv. 2019 Sep 17;9(50):29105-29108. doi: 10.1039/c9ra03117k. eCollection 2019 Sep 13.
Barrier-guided CVD growth could provide a new route to printed electronics by combining high quality 2D materials synthesis with scalable and cost-effective deposition methods. Unfortunately, we observe the limited stability of the barrier at growth conditions which results in its removal within minutes due to hydrogen etching. This work describes a route towards enhancing the stability of an ink-jet deposited barrier for high resolution patterning of high quality graphene. By modifying the etching kinetics under confinement, the barrier film could be stabilized and high resolution barriers could be retained even after 6 hours of graphene growth. Thus produced microscopic graphene devices exhibited an increase in conductivity by 6 orders of magnitude and a decrease in defectiveness by 48 times yielding performances that are superior to devices produced by traditional lithographical patterning which indicates the potential of our approach for future electronic applications.
通过将高质量二维材料合成与可扩展且经济高效的沉积方法相结合，势垒引导的化学气相沉积（CVD）生长可为印刷电子学提供一条新途径。不幸的是，我们观察到该势垒在生长条件下的稳定性有限，由于氢蚀刻，它会在几分钟内被去除。这项工作描述了一种提高喷墨沉积势垒稳定性的方法，用于高质量石墨烯的高分辨率图案化。通过在受限条件下改变蚀刻动力学，势垒膜可以得到稳定，即使在石墨烯生长6小时后，高分辨率势垒仍能保留。由此制备的微观石墨烯器件的电导率提高了6个数量级，缺陷率降低了48倍，其性能优于传统光刻图案化制备的器件，这表明我们的方法在未来电子应用中的潜力。
