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用于模拟太阳光下光催化氧化砷(III)的BiWO/钠基膨润土复合材料的合成

Synthesis of BiWO/Na-bentonite composites for photocatalytic oxidation of arsenic(iii) under simulated sunlight.

作者信息

Yang Quancheng, Dai Yunxiang, Huang Zijian, Zhang Jing, Zeng Ming, Shi Changsheng

机构信息

School of Chemical and Environmental Engineering, China University of Mining and Technology Beijing 100083 P. R. China.

Key Laboratory of Environmental Nano-Technology and Health Effect, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences Beijing 100085 P. R. China

出版信息

RSC Adv. 2019 Sep 19;9(51):29689-29698. doi: 10.1039/c9ra06181a. eCollection 2019 Sep 18.

Abstract

Novel BiWO/bentonite (denoted as BWO/BENT) composites were prepared a typical hydrothermal process and employed for the photocatalytic oxidation of arsenic(iii) (As(iii)). The properties of the prepared samples were characterized through X-ray diffraction, transmission and scanning electron microscopy, UV-visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. Effects of the BENT ratio on the As(iii) removal were explored under simulated sunlight, and the best photocatalytic effect was observed for the composite with BWO : BENT = 7 : 3 w/w. Compared with the pure BWO, the BWO/BENT composites exhibited an improved photocatalytic ability in the removal of As(iii), which was mainly ascribed to the enlarged specific surface area and the suppressed electron-hole recombination by the incorporated BENT. Furthermore, photo-generated holes (h) and superoxide radicals ·O were confirmed to be the major contributors to the oxidation of As(iii), and an associated mechanism of photocatalytic oxidation of As(iii) over BWO/BENT composites was proposed.

摘要

通过典型的水热法制备了新型BiWO/膨润土(记为BWO/BENT)复合材料,并将其用于光催化氧化砷(III)(As(III))。通过X射线衍射仪、透射电子显微镜和扫描电子显微镜、紫外可见漫反射光谱、X射线光电子能谱和光致发光光谱对制备的样品的性质进行了表征。在模拟太阳光下探究了膨润土比例对As(III)去除效果的影响,发现BWO : BENT = 7 : 3 w/w的复合材料具有最佳的光催化效果。与纯BiWO相比,BWO/BENT复合材料在去除As(III)方面表现出更高的光催化活性,这主要归因于其比表面积的增大以及膨润土对电子-空穴复合的抑制作用。此外,证实光生空穴(h)和超氧自由基·O 是As(III)氧化的主要贡献者,并提出了BWO/BENT复合材料上As(III)光催化氧化的相关机理。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7dae/9071977/d00eb008905a/c9ra06181a-f1.jpg

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