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用于平衡重组能、应变能和宽带隙之间矛盾的立方纳米网格。

Cubic Nanogrids for Counterbalance Contradiction among Reorganization Energy, Strain Energy, and Wide Bandgap.

作者信息

Wang Yongxia, Fu Mingyang, Zhang Xiaofei, Jin Dong, Zhu Shiyuan, Wang Yucong, Wu Zhenyu, Bao Jianmin, Cheng Xiaogang, Yang Lei, Xie Linghai

机构信息

Center for Molecular Systems & Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.

Institute of Agricultural Remote Sensing and Information, Heilongjiang Academy of Agricultural Sciences, Harbin 150086, China.

出版信息

J Phys Chem Lett. 2022 May 19;13(19):4297-4308. doi: 10.1021/acs.jpclett.2c00827. Epub 2022 May 9.

Abstract

Molecular cross-scale gridization and polygridization of organic π-backbones make it possible to install 0/1/2/3-dimensional organic wide-bandgap semiconductors (OWBGSs) with potentially ZnO-like fascinating multifunctionality such as optoelectronic and piezoelectronic features. However, gridization effects are limited to uncover, because the establishment of gridochemistry still requires a long time, which offers a chance to understand the effects with a theoretical method, together with data statistics and machine learning. Herein, we demonstrate a state-of-the-art 3D cubic nanogridon with a size of ∼2 × 2 × 1.5 nm to examine its multigridization of π-segments on the bandgap, molecular strain energy (MSE), as well as reorganization energy (ROE). A cubic gridon (CG) consists of a four-armed bifluorene skeleton and a thiophene-containing fused arene plane with the Csp spiro-linkage, which can be deinstalled into face-on or edge-on monogrids. As a result, multigridization does not significantly reduce bandgaps ( ≥ 4.03 eV), while the MSE increases gradually from 4.72 to 23.83 kcal/mol. Very importantly, the ROE of a CG exhibits an extreme reduction down to ∼28 meV (λ) that is near the thermal fluctuation energy (∼26 meV). Our multigridization results break through the limitation of the basic positively proportional relationship between reorganization energies and bandgaps in organic semiconductors. Furthermore, multigridization makes it possible to keep the ROE small under the condition of a high MSE in OWBGS that will guide the cross-scale design of multifunctional OWBGSs with both inorganics' optoelectronic performance and organics' mechanical flexibility.

摘要

有机π骨架的分子跨尺度网格化和多网格化使得安装具有潜在类似ZnO的迷人多功能性(如光电和压电电子特性)的0/1/2/3维有机宽带隙半导体(OWBGS)成为可能。然而,网格化效应尚有待揭示,因为网格化学的建立仍需很长时间,这为用理论方法以及数据统计和机器学习来理解这些效应提供了机会。在此,我们展示了一种尺寸约为2×2×1.5 nm的先进三维立方纳米格点,以研究其π片段在带隙、分子应变能(MSE)以及重组能(ROE)方面的多网格化情况。一个立方格点(CG)由一个四臂双芴骨架和一个含噻吩的稠合芳烃平面通过Csp螺环连接组成,它可以拆解成面朝上或边缘朝上的单格点。结果表明,多网格化并不会显著降低带隙(≥4.03 eV),而MSE从4.72逐渐增加到23.83 kcal/mol。非常重要的是,CG的ROE急剧降低至约28 meV(λ),接近热涨落能量(约26 meV)。我们的多网格化结果突破了有机半导体中重组能与带隙之间基本正比关系的限制。此外,多网格化使得在OWBGS中高MSE条件下保持ROE较小成为可能,这将指导具有无机光电性能和有机机械柔韧性的多功能OWBGS的跨尺度设计。

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