Jain Hardik, Creatore Mariadriana, Poodt Paul
TNO/Holst Centre, 5656 AE Eindhoven, Netherlands.
Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
Dalton Trans. 2022 May 24;51(20):7918-7927. doi: 10.1039/d2dt00570k.
Trimethylaluminum is the most used aluminum precursor in atomic and molecular layer deposition (ALD/MLD). It provides high growth-per-cycle (GPC), is highly reactive and is relatively low cost. However, in the deposition of hybrid alucone films, TMA tends to infiltrate into the films requiring very long purge steps and thereby limiting the deposition rate (nm s) of the process. From our previous studies, we know that dimethylaluminum isopropoxide (DMAI) could be a potential candidate to substitute TMA in alucone depositions as it does not seem to infiltrate into the films. In this study, we perform a more detailed investigation of MLD of alucone on an atmospheric pressure spatial MLD system using DMAI as the aluminum precursor. The effect of deposition temperature and reactant purge times on the overall GPC has been investigated and a decreasing GPC with increasing deposition temperature and increasing EG purge time has been observed. Furthermore, the DMAI alucone films have been compared for their chemical environment and degradation with the films prepared using TMA and EG, showing striking similarities between the two. The results demonstrate that DMAI can be used as an alternative precursor to TMA for MLD of alucone films and this work can be used as a guide for designing efficient MLD processes in the future.
三甲基铝是原子层沉积和分子层沉积（ALD/MLD）中使用最广泛的铝前驱体。它具有高的每循环生长率（GPC），反应活性高且成本相对较低。然而，在杂化铝酮薄膜的沉积过程中，三甲基铝倾向于渗透到薄膜中，这需要非常长的吹扫步骤，从而限制了该工艺的沉积速率（纳米/秒）。从我们之前的研究中可知，二甲基铝异丙醇盐（DMAI）可能是在铝酮沉积中替代三甲基铝的潜在候选物，因为它似乎不会渗透到薄膜中。在本研究中，我们在大气压空间MLD系统上使用DMAI作为铝前驱体，对铝酮的MLD进行了更详细的研究。研究了沉积温度和反应物吹扫时间对整体GPC的影响，观察到随着沉积温度升高和乙二醇吹扫时间增加，GPC降低。此外，还比较了DMAI铝酮薄膜与使用三甲基铝和乙二醇制备的薄膜在化学环境和降解方面的情况，结果显示两者之间有显著的相似性。结果表明，DMAI可作为三甲基铝的替代前驱体用于铝酮薄膜的MLD，这项工作可为未来设计高效的MLD工艺提供指导。
