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应变和筛选对扶手椅型石墨烯纳米带阵列场发射特性的影响:第一性原理研究

Strain and screening effects on field emission properties of armchair graphene nanoribbon arrays: a first-principles study.

作者信息

Hu Han, Loh Siow Mean, Leung Tsan-Chuen, Lin Ming-Chieh

机构信息

Department of Physics, National Chung Cheng University Chia-Yi 62101 Taiwan

Department of Physics, University of Warwick Coventry CV4 7AL UK.

出版信息

RSC Adv. 2018 Jun 20;8(40):22625-22634. doi: 10.1039/c8ra02812e. eCollection 2018 Jun 19.

Abstract

The field screening effect on the field-emission properties of armchair graphene nanoribbons (AGNRs) under strain has been studied using first-principles calculations with local density approximation (LDA). Using the zone folding method with the effect of a dipole barrier along with the work function of strained graphene, we can obtain the work function of AGNR of any width under strain, confirmed with the LDA calculations. We have systematically investigated the effects of inter-ribbon distance and ribbon width on the work function of AGNR arrays. It is found that the work function of AGNR arrays increases rapidly as the inter-ribbon distance increases, which is caused by the positive dipole at the edge of the ribbon. Using a simple linear interpolation model, we can obtain the work function of AGNRs of any ribbon-width and inter-ribbon distance. The dependences of the inter-ribbon distance and strain on the field enhancement factor have been determined. The enhancement factor reaches about 90% of its saturated value as the inter-ribbon distance approaches two times the ribbon-width. For a tensile strain, the field enhancement factor increases with applied strain while for a compressive one, the field enhancement factor is nearly independent. The effects of inter-ribbon distance and strain on the enhancement factor can be explained by the interlayer and intralayer screening effects, respectively.

摘要

利用局域密度近似(LDA)的第一性原理计算方法,研究了应变作用下扶手椅型石墨烯纳米带(AGNRs)的场筛选效应及其场发射特性。通过采用考虑偶极势垒效应的区折叠方法以及应变石墨烯的功函数,我们能够得到应变状态下任意宽度AGNR的功函数,这一结果通过LDA计算得到了证实。我们系统地研究了带间距离和带宽度对AGNR阵列功函数的影响。研究发现,随着带间距离的增加,AGNR阵列的功函数迅速增大,这是由纳米带边缘的正偶极子引起的。利用一个简单的线性插值模型,我们可以得到任意带宽度和带间距离的AGNR的功函数。确定了带间距离和应变对场增强因子的依赖性。当带间距离接近带宽度的两倍时,增强因子达到其饱和值的约90%。对于拉伸应变,场增强因子随施加的应变增加,而对于压缩应变,场增强因子几乎保持不变。带间距离和应变对增强因子的影响分别可以用层间和层内筛选效应来解释。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b1ad/9081386/600d3dfcecc3/c8ra02812e-f1.jpg

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