Chandel Namrata, Imran M M A, Mehta Neeraj
Glass Science Laboratory, Department of Physics, Banaras Hindu University Varanasi-221005 India
Department of Physics, Sunbeam College for Women Varanasi-221005 India.
RSC Adv. 2018 Jul 16;8(45):25468-25479. doi: 10.1039/c8ra04214d.
The dielectric relaxation and thermally assisted a.c. conduction play an important role in understanding the conduction mechanism in chalcogenide glasses. These two phenomena are often the deciding factors of the suitability of chalcogenide materials for particular device applications. Dielectric relaxation studies are important to understand the nature and origin of dielectric losses, which, in effect, may be useful in the determination of structure and defects in solids. The study of thermally assisted a.c. conduction can be used as a tool to understand the nature of defect states and the estimation of their density of defect states. In this paper, therefore, we have studied the metal-induced effects of cadmium (Cd), indium (In) and antimony (Sb) on dielectric relaxation and thermally activated a.c. conduction in ternary SeTeSn glass. The density of charged defect states in quaternary SeTeSnM alloys is found to vary with the electro-negativity difference ( - ) of the foreign element M and Te. Further analysis shows that the increasing sequence of the density of charged defects is explained in terms of variation in the lone-pair electrons after the incorporation of Cd, In and Sb.
介电弛豫和热辅助交流传导在理解硫属化物玻璃的传导机制中起着重要作用。这两种现象通常是硫属化物材料适用于特定器件应用的决定性因素。介电弛豫研究对于理解介电损耗的性质和起源很重要，实际上，这可能有助于确定固体中的结构和缺陷。热辅助交流传导的研究可以用作理解缺陷态的性质及其缺陷态密度估计的工具。因此，在本文中，我们研究了镉（Cd）、铟（In）和锑（Sb）对三元SeTeSn玻璃中介电弛豫和热激活交流传导的金属诱导效应。发现四元SeTeSnM合金中带电缺陷态的密度随外来元素M与碲的电负性差（ - ）而变化。进一步分析表明，带电缺陷密度的增加顺序可以根据掺入Cd、In和Sb后孤对电子的变化来解释。
