Near-complete photoluminescence retention and improved stability of InP quantum dots after silica embedding for their application to on-chip-packaged light-emitting diodes.

Silica is the most commonly used oxide encapsulant for passivating fluorescent quantum dots (QDs) against degradable conditions. Such a silica encapsulation has been conventionally implemented a Stöber or reverse microemulsion process, mostly targeting CdSe-based QDs to date. However, both routes encounter a critical issue of considerable loss in photoluminescence (PL) quantum yield (QY) compared to pristine QDs after silica growth. In this work, we explore the embedment of multishelled InP/ZnSeS/ZnS QDs, whose stability is quite inferior to CdSe counterparts, in a silica matrix by means of a tetramethyl orthosilicate-based, waterless, catalyst-free synthesis. It is revealed that the original QY (80%) of QDs is nearly completely retained in the course of the present silica embedding reaction. The resulting QD-silica composites are then placed in degradable conditions such UV irradiation, high temperature/high humidity, and operation of an on-chip-packaged light-emitting diode (LED) to attest to the efficacy of silica passivation on QD stability. Particularly, the promising results with regard to device efficiency and stability of the on-chip-packaged QD-LED firmly suggest the effectiveness of the present silica embedding strategy in not only maximally retaining QY of QDs but effectively passivating QDs, paving the way for the realization of a highly efficient, robust QD-LED platform.