Mortazavi Somayeh, Mollabashi Mahmoud, Barri Rasoul, Jones Kevin, Xiao John Q, Opila Robert L, Shah S Ismat
School of Physics, Iran University of Science and Technology Tehran 16844 Iran
Department of Physics & Astronomy, University of Delaware Newark DE 19716 USA
RSC Adv. 2018 Apr 3;8(23):12808-12814. doi: 10.1039/c8ra00097b.
Modification of various properties of graphene oxide (GO) films on SiO/Si substrate under KrF laser radiation was extensively studied. X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy and the electrical resistance measurements were employed to correlate the effects of laser irradiation on structural, chemical and electrical properties of GO films under different laser fluences. Raman spectroscopy shows reduced graphene oxide patterns with increased / ratios in irradiated samples. X-ray photoelectron spectroscopy shows a high ratio of carbon to oxygen atoms in the reduced graphene oxide (rGO) films compared to the pristine GO films. X-ray diffraction patterns display a significant drop in the diffraction peak intensity after laser irradiation. Finally, the electrical resistance of irradiated GO films reduced by about four orders of magnitudes compared to the unirradiated GO films. Simultaneously, reduction and patterning of GO films display promising fabrication technique that can be useful for many graphene-based devices.
对SiO/Si衬底上氧化石墨烯（GO）薄膜在KrF激光辐射下各种性能的改性进行了广泛研究。采用X射线衍射、X射线光电子能谱、拉曼光谱和电阻测量来关联不同激光能量密度下激光辐照对GO薄膜结构、化学和电学性能的影响。拉曼光谱显示，辐照样品中氧化石墨烯图案减少， / 比值增加。X射线光电子能谱显示，与原始GO薄膜相比，还原氧化石墨烯（rGO）薄膜中碳与氧原子的比例更高。X射线衍射图谱显示激光辐照后衍射峰强度显著下降。最后，与未辐照的GO薄膜相比，辐照后的GO薄膜电阻降低了约四个数量级。同时，GO薄膜的还原和图案化展示了一种有前景的制造技术，可用于许多基于石墨烯的器件。
