基于碳化硅纳米带的“Y”形BP/PbS/PbSe纳米器件。

"Y"-shaped BP/PbS/PbSe nano-devices based on silicon carbide nanoribbons.

作者信息

Zhang Lishu, Li Tao, Jiang Yangyan, Arandiyan Hamidreza, Li Hui

机构信息

Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University Jinan 250061 People's Republic of China

Laboratory of Advanced Catalysis for Sustainability, School of Chemistry, The University of Sydney Sydney 2006 Australia

出版信息

RSC Adv. 2018 Oct 12;8(61):35050-35055. doi: 10.1039/c8ra07372d. eCollection 2018 Oct 10.

DOI:10.1039/c8ra07372d

PMID:35547065

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9087283/

Abstract

Quantum mechanics-based simulations have been undertaken to support the development and application of multi-functional nano-devices constructed from zigzag silicon carbide nanoribbons (zSiCNRs), boron phosphide (BP), nanoribbons (zBPNRs), and Pb-chalcogenide (PbS, PbSe) nanoribbons. We explore the effect of gate voltage on the electronic performance of the devices. Symmetric - characteristics, spin polarization properties, NDR effects, and high rectification ratios are observed among these devices. The effects of the angle, length and width of the constructed nanoribbon are also studied. The results show that the width of the nanoribbons can have a substantial influence on their electronic performance. These results provide a crucial simulation input to help guide the design of multi-functional nano-devices built from hybrid SiC-BP/PbS/PbSe nanostructures, and this research is essential for better understanding of their electronic transport properties.

摘要

基于量子力学的模拟已被用于支持由锯齿状碳化硅纳米带（zSiCNRs）、磷化硼（BP）纳米带（zBPNRs）和铅硫属化物（PbS、PbSe）纳米带构建的多功能纳米器件的开发和应用。我们研究了栅极电压对器件电子性能的影响。在这些器件中观察到了对称特性、自旋极化特性、负微分电阻（NDR）效应和高整流比。还研究了构建的纳米带的角度、长度和宽度的影响。结果表明，纳米带的宽度对其电子性能有重大影响。这些结果提供了关键的模拟输入，有助于指导由混合SiC-BP/PbS/PbSe纳米结构构建的多功能纳米器件的设计，并且这项研究对于更好地理解其电子输运特性至关重要。