Sun Liangling, Devakumar Balaji, Liang Jia, Li Bin, Wang Shaoying, Sun Qi, Guo Heng, Huang Xiaoyong
Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education and Shanxi Province, College of Physics and Optoelectronics, Taiyuan University of Technology Taiyuan 030024 P. R. China
RSC Adv. 2018 Sep 12;8(56):31835-31842. doi: 10.1039/c8ra06435k.
In this paper, we reported on the high-efficiency and thermally-stable LaLiSbO:Mn,Mg (LLS:Mn,Mg) far-red emitting phosphors. Under 338 nm excitation, the composition-optimized LLS:0.3%Mn,1.6%Mg phosphors which were made up of [SbO], [LiO], and [LaO] polyhedrons, showed intense far-red emissions peaking at 712 nm (E → A transition) with internal quantum efficiency as high as 92%. The LLS:0.3%Mn,1.6%Mg phosphors also exhibited high thermal stability, and the emission intensity at 423 K only reduced by 42% compared with its initial value at 303 K. The far-red light-emitting device has also been made by using the LLS:0.3%Mn,1.6%Mg phosphors and a 365 nm emitting InGaN chip, which can emit far-red light that is visible to the naked eye. Importantly, the emission spectrum of the LLS:0.3%Mn,1.6%Mg phosphors can match well with the absorption spectrum of phytochrome P, indicating the potential of these phosphors to be used in plant growth light-emitting diodes.
在本文中,我们报道了高效且热稳定的LaLiSbO:Mn,Mg(LLS:Mn,Mg)远红光发射荧光粉。在338nm激发下,由[ SbO ]、[ LiO ]和[ LaO ]多面体组成的成分优化的LLS:0.3%Mn,1.6%Mg荧光粉呈现出在712nm处(E→A跃迁)达到峰值的强烈远红光发射,内量子效率高达92%。LLS:0.3%Mn,1.6%Mg荧光粉还表现出高的热稳定性,在423K时的发射强度与303K时的初始值相比仅降低了42%。利用LLS:0.3%Mn,1.6%Mg荧光粉和发射365nm光的InGaN芯片制成了远红光发光器件,该器件能发出肉眼可见的远红光。重要的是,LLS:0.3%Mn,1.6%Mg荧光粉的发射光谱能与光敏色素P的吸收光谱很好地匹配,这表明这些荧光粉有潜力用于植物生长发光二极管。