用于植物生长LED的新型远红光发射BaLaMgNbO:Mn荧光粉的合成及光致发光性能
Synthesis and photoluminescence properties of novel far-red-emitting BaLaMgNbO:Mn phosphors for plant growth LEDs.
作者信息
Sun Qi, Wang Shaoying, Devakumar Balaji, Li Bin, Sun Liangling, Liang Jia, Huang Xiaoyong
机构信息
Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education and Shanxi Province, College of Physics and Optoelectronics, Taiyuan University of Technology Taiyuan 030024 PR China
出版信息
RSC Adv. 2018 Aug 10;8(50):28538-28545. doi: 10.1039/c8ra06048g. eCollection 2018 Aug 7.
A series of far-red-emitting BaLaMgNbO:Mn (BLMN:Mn) phosphors were successfully synthesized by a high-temperature solid-state reaction method. Crystal structure and luminescence properties of the obtained samples were systematically investigated. The emission spectra exhibited a strong narrow far-red emission band peaking at 700 nm with a full width at half-maximum (FWHM) of ∼36 nm under 360 nm excitation. The optimal Mn concentration was about 0.4 mol%. The internal quantum efficiency and CIE chromaticity coordinates of the BLMN:0.4% Mn phosphor were 52% and (0.7222, 0.2777), respectively. In addition, the luminescence mechanism has been analyzed using a Tanabe-Sugano energy level diagram. Finally, by using a 365 nm near-ultraviolet InGaN chip combined with BLMN:0.4% Mn phosphors, a far-red LED device was fabricated.
通过高温固相反应法成功合成了一系列发射远红光的BaLaMgNbO:Mn（BLMN:Mn）荧光粉。对所得样品的晶体结构和发光性能进行了系统研究。发射光谱在360nm激发下呈现出一个强烈的窄远红光发射带，峰值位于700nm，半高宽（FWHM）约为36nm。最佳Mn浓度约为0.4mol%。BLMN:0.4%Mn荧光粉的内量子效率和CIE色度坐标分别为52%和（0.7222,0.2777）。此外，利用田边-菅野能级图分析了发光机制。最后，通过使用365nm近紫外InGaN芯片与BLMN:0.4%Mn荧光粉相结合，制备了一种远红光发光二极管器件。
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