氧等离子体辅助增强无催化剂化学气相沉积法制备的ZnO纳米线的光响应
Oxygen plasma assisted enhanced photoresponse of ZnO nanowires fabricated by catalyst-free chemical vapor deposition.
作者信息
Jiang Haitao, Liu Shibin, Liang Liyuan, Lu Wenqiang
机构信息
School of Electronics and Information, Northwestern Polytechnical University Xi'an 710129 PR China
JiaoZuo Normal College Jiaozuo 454001 China.
出版信息
RSC Adv. 2018 Aug 14;8(51):28928-28933. doi: 10.1039/c8ra05040f.
In this paper, in order to enhance the performance of fabricated ZnO nanowires (NWs) by chemical vapor deposition (CVD) without catalysts, oxygen plasma was used to modify the ZnO nanowire-based interdigital microelectrode array photodetectors (IDA-PDs) at different times. The surface states of ZnO NWs with O plasma treatment were characterized X-ray photoelectron spectroscopy (XPS). Results showed that the photocurrent of the IDA-PDs continuously increased from 4 to 28 μA as the plasma-treatment time increased from 0 to 10 minutes. The response mechanism of O plasma treated ZnO NWs was investigated by illustrating the intensity of the surface oxygen atoms of ZnO NWs.This sample handling method can be beneficial in improving the performance of semiconductor photodetectors.
在本文中，为了在无催化剂的情况下通过化学气相沉积（CVD）提高制备的氧化锌纳米线（NWs）的性能，采用氧等离子体在不同时间对基于氧化锌纳米线的叉指式微电极阵列光电探测器（IDA-PDs）进行改性。用X射线光电子能谱（XPS）对经氧等离子体处理的氧化锌纳米线的表面态进行了表征。结果表明，随着等离子体处理时间从0分钟增加到10分钟，IDA-PDs的光电流从4 μA持续增加到28 μA。通过说明氧化锌纳米线表面氧原子的强度，研究了经氧等离子体处理的氧化锌纳米线的响应机制。这种样品处理方法有助于提高半导体光电探测器的性能。
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