Miao Yu, Xiao Zeqi, Zheng Zeyu, Lyu Da, Liu Qin, Wu Jieyu, Wu Yongbo, Wen Xiewen, Shui Lingling, Hu Xiaowen, Wang Kai, Tang Zhilie, Jiang Xiao-Fang
Laboratory of Quantum Engineering and Quantum Material, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510006, P. R. China.
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, 510006, P. R. China.
Adv Sci (Weinh). 2022 Jul;9(20):e2201046. doi: 10.1002/advs.202201046. Epub 2022 May 12.
The low-energy layer edge states (LESs) from quasi 2D hybrid perovskite single crystals have shown great potential because of their nontrivial photoelectrical properties. However, the underlying formation mechanism of the LESs still remains controversial. Also, the presence or creation of the LESs is of high randomness due to the lack of proper techniques to manually generate these LESs. Herein, using a single crystals platform of quasi-2D (BA) (MA) Pb I (n > 1) perovskites, the femtosecond laser ablation approach to design and write the LESs with a high spatial resolution is reported. Fundamentally, these LESs are of smaller bandgap 3D MAPbI nanocrystals which are formed by the laser-induced BA escaping from the lattice and thus the lattice shrinkage from quasi-2D to 3D structures. Furthermore, by covering the crystal with tape, an additional high-energy emission state corresponding to the reformation of (BA) PbI (n = 1) within the irradiation region is generated. This work presents a simple and efficient protocol to manually write LESs on single crystals and thus lays the foundation for utilizing these LESs to further enhance the performance of future photoelectronic devices.
准二维混合钙钛矿单晶中的低能层边缘态(LESs)因其非凡的光电特性而展现出巨大潜力。然而,LESs的潜在形成机制仍存在争议。此外,由于缺乏手动生成这些LESs的合适技术,LESs的存在或产生具有高度随机性。在此,利用准二维(BA)(MA)PbI(n > 1)钙钛矿的单晶平台,报道了用飞秒激光烧蚀方法以高空间分辨率设计和写入LESs。从根本上讲,这些LESs是由激光诱导BA从晶格中逸出从而使晶格从准二维结构收缩为三维结构而形成的带隙较小的3D MAPbI纳米晶体。此外,通过用胶带覆盖晶体,在辐照区域内会产生与(BA)PbI(n = 1)重新形成相对应的额外高能发射态。这项工作提出了一种在单晶上手动写入LESs的简单高效方案,从而为利用这些LESs进一步提高未来光电器件的性能奠定了基础。