Ju Zheng, Crawford Caitlin, Adamczyk Jesse, Toberer Eric S, Kauzlarich Susan M
Department of Chemistry, University of California Davis, One Shields Avenue, Davis, California 95616, United States.
Department of Physics, Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, United States.
ACS Appl Mater Interfaces. 2022 Jun 1;14(21):24886-24896. doi: 10.1021/acsami.2c03011. Epub 2022 May 17.
Thermoelectric materials convert heat energy into electricity, hold promising capabilities for energy waste harvesting, and may be the future of sustainable energy utilization. In this work, we successfully synthesized core-shell BiTe/SbTe (BTST) nanostructured heterojunctions via a two-step solution route. Samples with different BiTe core to SbTe shell ratios could be synthesized by controlling the reaction precursors. Scanning electron microscopy images show well-defined hexagonal nanoplates and the distinct interfaces between BiTe and SbTe. The similarity of the area ratios with the precursor ratios indicates that the growth of the SbTe shell mostly took place on the lateral direction rather than the vertical. Transmission electron microscopy revealed the crystalline nature of the as-synthesized BiTe core and SbTe shell. Energy-dispersive X-ray spectroscopy verified the lateral growth of a SbTe shell on the BiTe core. Thermoelectric properties were measured on pellets obtained from powders via spark plasma sintering with two different directions, in-plane and out-of-plane, showing anisotropic properties due to the nanostructure alignment in the pellets. All samples showed a degenerate semiconducting character with the electrical resistivity increasing with the temperature. Starting from SbTe, the electrical resistivity increases with the increase in amounts of BiTe. Thermal conductivity is lowered due to the increase in interfaces and additional phonon scattering. We show that the out-of-plane direction of the BTST 1-3 sample (where 1-3 indicates the ratio of BT to ST) demonstrates a high Seebeck value of 145 μV/K at 500 K which may be attributed to an energy filtering effect across the heterojunction interfaces. The highest overall is observed for the BTST 1-3 sample in the out-of-plane direction at 500 K. The values increase continuously over the measured temperature range, indicating a probable higher value at increased temperatures.
热电材料可将热能转化为电能,在收集能量浪费方面具有广阔前景,可能成为可持续能源利用的未来发展方向。在本工作中,我们通过两步溶液法成功合成了核壳结构的BiTe/SbTe(BTST)纳米结构异质结。通过控制反应前驱体,可以合成具有不同BiTe核与SbTe壳比例的样品。扫描电子显微镜图像显示出轮廓清晰的六边形纳米片以及BiTe和SbTe之间明显的界面。面积比与前驱体比例的相似性表明,SbTe壳的生长主要发生在横向而非垂直方向。透射电子显微镜揭示了合成后的BiTe核和SbTe壳的晶体性质。能量色散X射线光谱证实了SbTe壳在BiTe核上的横向生长。通过火花等离子烧结从粉末制备的颗粒,在面内和面外两个不同方向上测量了热电性能,由于颗粒中纳米结构的排列,显示出各向异性。所有样品均表现出简并半导体特性,电阻率随温度升高而增加。从SbTe开始,电阻率随着BiTe含量的增加而增加。由于界面增加和声子散射额外增加,热导率降低。我们表明,BTST 1-3样品(其中1-3表示BT与ST的比例)的面外方向在500 K时表现出145 μV/K的高塞贝克值,这可能归因于异质结界面上的能量过滤效应。在500 K时,BTST 1-3样品在面外方向上观察到最高的整体性能。在测量的温度范围内,性能值持续增加,表明在更高温度下可能有更高的值。