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在癫痫电点燃模型中,组胺 H3 受体反向激动剂匹哚尼沙明的抗惊厥活性。

Anticonvulsant activity of the histamine H3 receptor inverse agonist pitolisant in an electrical kindling model of epilepsy.

机构信息

Department of Plant and Animal Biology, Faculty of Biological Science and Technology, University of Isfahan, Isfahan, Iran.

出版信息

Neurosci Lett. 2022 Jun 21;782:136685. doi: 10.1016/j.neulet.2022.136685. Epub 2022 May 19.

Abstract

Studies have shown that brain histamine has a role in seizure pathophysiology. Histamine acts by four distinct receptor subtypes (H1R-H4R). Previous reports signified the anticonvulsant activity of histamine H3R antagonists. We evaluated the effect of intra-amygdala injection of pitolisant the H3R inverse agonist on seizures induced by the electrical kindling model of epilepsy. Eighteen adult male rats with an approximate weight of 300 g were used. A tri-polar electrode twisted with the guide cannula, and two monopolar electrodes were implanted into the basolateral amygdala or the surface of the skull using stereotaxic surgery. One week after surgery, the threshold was determined in the animals. Twenty-four hours afterward, the animals received six stimuli daily with the threshold intensity until the generation of three consecutive stages five seizures. Then, saline, and 24 h later, pitolisant at three doses (1, 10, and 100 μg) were injected into the amygdala in distinct rats. Thirty minutes after injection of the drug or its solvent, seizure parameters including after-discharge duration (ADD), seizure stage (SS), and stage five duration (S5D) were recorded. Data analysis indicated that pitolisant reduced S5D at all doses, significantly. Pitolisant at the dose of 100 µg also decreased ADD and SS, significantly. However, pitolisant at the doses of 1 and 10 µg did not change ADD and SS. The dose-response curves showed that the anticonvulsant activity of pitolisant changed in a dose-dependent manner. In conclusion, the results confirmed the powerful anticonvulsant effects of pitolisant in the electrical kindling model of epilepsy.

摘要

研究表明,脑组胺在癫痫发病机制中起作用。组胺通过四个不同的受体亚型(H1R-H4R)起作用。先前的报告表明组胺 H3R 拮抗剂具有抗惊厥活性。我们评估了内侧杏仁核注射组胺 H3 反向激动剂匹莫齐特对癫痫电点燃模型诱导的癫痫发作的影响。使用立体定向手术将带有导向套管的三极电极和两个单极电极植入成年雄性大鼠的外侧杏仁核或颅骨表面。手术后一周,确定动物的阈值。24 小时后,动物每天接受六次刺激,强度达到阈值,直到连续产生三个阶段五次癫痫发作。然后,在不同的大鼠中,将生理盐水和 24 小时后,将匹莫齐特以三个剂量(1、10 和 100μg)注入杏仁核。注射药物或其溶剂 30 分钟后,记录癫痫发作参数,包括后放电持续时间(ADD)、癫痫发作阶段(SS)和第五阶段持续时间(S5D)。数据分析表明,匹莫齐特在所有剂量下均显著降低 S5D。匹莫齐特在 100μg 剂量下还显著降低了 ADD 和 SS,但在 1 和 10μg 剂量下,ADD 和 SS 没有变化。剂量反应曲线表明,匹莫齐特的抗惊厥活性呈剂量依赖性变化。总之,这些结果证实了匹莫齐特在癫痫电点燃模型中具有强大的抗惊厥作用。

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