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通过选择性合金化和缺陷调制实现环保型碲化锡基材料的高热电性能

Achieving High Thermoelectric Performance of Eco-Friendly SnTe-Based Materials by Selective Alloying and Defect Modulation.

作者信息

Abbas Adeel, Nisar Mohammad, Zheng Zhuang Hao, Li Fu, Jabar Bushra, Liang Guangxing, Fan Ping, Chen Yue-Xing

机构信息

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.

出版信息

ACS Appl Mater Interfaces. 2022 Jun 8;14(22):25802-25811. doi: 10.1021/acsami.2c05691. Epub 2022 May 24.

Abstract

Recently, rock-salt lead-free chalcogenide SnTe-based thermoelectric (TE) materials have been considered an alternative to PbTe because of the nontoxic properties of Sn as compared to Pb. However, high carrier concentration that originated from intrinsic Sn vacancies and relatively high thermal conductivity of pristine SnTe lead to poor TE efficiency, which makes room for improving its TE properties. In this study, we present that the Na incorporation into the SnTe matrix is helpful for modifying the electronic band structure, optimization of carrier concentration, introducing dislocations, and kink planes; benefiting from these synergistic effects obviates the disadvantages of SnTe and makes a significant improvement in TE performance. We reveal that Na favorably impacts the structure of electronic bands by valence, conduction band engineering, leading to a nice enhancement in the Seebeck coefficient, which exhibits the highest power factor value of 37.93 μWcm K at 898 K, representing the best result for the SnTe material system. Moreover, a broader phonon spectrum is introduced by new phonon-scattering centers, scattered by dislocations and kink planes which suppressed lattice thermal conductivity to 0.57 Wm K at 898 K, which is much lower than that of pristine SnTe. Ultimately, a maximum of 1.26 at 898 K is achieved in the SnTe + 3% Na sample, which is 97% higher than that of the pristine SnTe, suggesting that SnTe-based materials are a robust candidate for TE applications specifically, an ideal alternative of lead chalcogenides for TE power generation at high temperatures.

摘要

最近,基于岩盐结构的无铅硫族化合物SnTe热电(TE)材料因其与Pb相比具有无毒特性,被认为是PbTe的替代品。然而,源自本征Sn空位的高载流子浓度以及原始SnTe相对较高的热导率导致TE效率较低,这为改善其TE性能提供了空间。在本研究中,我们表明将Na掺入SnTe基体有助于修改电子能带结构、优化载流子浓度、引入位错和扭折面;受益于这些协同效应消除了SnTe的缺点,并在TE性能方面取得了显著改善。我们揭示Na通过价带、导带工程对电子能带结构产生有利影响,导致塞贝克系数有显著提高,在898 K时表现出37.93 μWcm K的最高功率因子值,代表了SnTe材料体系的最佳结果。此外,新的声子散射中心引入了更宽的声子谱,由位错和扭折面散射,在898 K时将晶格热导率抑制到0.57 Wm K,远低于原始SnTe。最终,SnTe + 3% Na样品在898 K时达到了1.26的最大值,比原始SnTe高97%,这表明基于SnTe材料是TE应用的有力候选者,特别是在高温下用于TE发电的理想硫族铅化物替代品。

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