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异构效应驱动的基于羟基苯乙烯的嵌段共聚物热驱动自组装

Isomeric Effect Enabled Thermally Driven Self-Assembly of Hydroxystyrene-Based Block Copolymers.

作者信息

Kanimozhi Catherine, Kim Myungwoong, Larson Steven R, Choi Jonathan W, Choo Youngwoo, Sweat Daniel P, Osuji Chinedum O, Gopalan Padma

机构信息

Department of Chemistry, Inha University, Incheon 22212, Korea.

Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06511, United States.

出版信息

ACS Macro Lett. 2016 Jul 19;5(7):833-838. doi: 10.1021/acsmacrolett.6b00376. Epub 2016 Jun 28.

Abstract

We demonstrate through isomeric effect the modulation of thermal properties of poly(hydroxystyrene) (PHS)-based block copolymers (BCPs). A minimal structural change of substituting 3HS for 4HS in the BCP results in a drastic decrease in , which in turn enables the thin film assembly of the BCP via thermal annealing. We synthesized a series of poly(3-hydroxystyrene---butylstyrene) [P(3HS--BuSt)] and poly(4-hydroxystyrene---butylstyrene) [P(4HS--BuSt)] BCPs by sequential anionic polymerization of protected 3HS/4HS monomer and BuSt followed by deprotection. Measured of P(3HS) was ∼20-30 °C lower than P(4HS) of comparable molecular weights. As a result, thermally driven self-assembly of P(3HS--tBuSt) BCPs in both bulk and thin film is demonstrated. For P(4HS--tBuSt) thermal annealing in thin-film at high temperatures results in poorly developed morphology due to cross-linking reaction of the 4HS block. The smallest periodicity observed for P(3HS--tBuSt) was 8.8 nm in lamellar and 11.5 nm in cylindrical morphologies. The functionality of the 3HS block was exploited to incorporate vapor phase metal oxide precursors to generate sub-10 nm alumina nanowires.

摘要

我们通过异构效应证明了基于聚(羟基苯乙烯)(PHS)的嵌段共聚物(BCP)热性能的调制。在BCP中用3HS取代4HS的最小结构变化导致某一性质急剧下降,这反过来又使得BCP能够通过热退火进行薄膜组装。我们通过对受保护的3HS/4HS单体和BuSt进行顺序阴离子聚合,然后脱保护,合成了一系列聚(3 - 羟基苯乙烯 - 丁基苯乙烯)[P(3HS - BuSt)]和聚(4 - 羟基苯乙烯 - 丁基苯乙烯)[P(4HS - BuSt)] BCP。测得的可比分子量的P(3HS)的某一性质比P(4HS)低约20 - 30°C。结果表明,P(3HS - tBuSt) BCP在本体和薄膜中都能进行热驱动自组装。对于P(4HS - tBuSt),由于4HS嵌段的交联反应,在高温下进行薄膜热退火会导致形态发育不良。观察到的P(3HS - tBuSt)的最小周期在层状形态中为8.8 nm,在柱状形态中为11. nm。利用3HS嵌段的功能引入气相金属氧化物前驱体,以生成亚10 nm的氧化铝纳米线。

原文中两个未明确的“某一性质”,因不清楚具体指代,保留原文表述方式。

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