Thelen Jacob L, Wu Shao-Ling, Javier Anna E, Srinivasan Venkat, Balsara Nitash P, Patel Shrayesh N
Department of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720, United States.
ACS Macro Lett. 2015 Dec 15;4(12):1386-1391. doi: 10.1021/acsmacrolett.5b00827. Epub 2015 Nov 25.
Conjugated semiconducting polymers, such as poly(3-hexylthiophene) (P3HT), are poised to play an integral role in the development of organic electronic devices; however, their performance is governed by factors that are intrinsically coupled: dopant concentration, carrier mobility, crystal structure, and mesoscale morphology. We utilize synchrotron X-ray scattering and electrochemical impedance spectroscopy to probe the crystal structure and electronic properties of P3HT during electrochemical doping. We show that doping strains the crystalline domains, coincident with an exponential increase in hole mobility. We believe these observations provide guidance for the development of improved theoretical models for charge transport in semiconducting polymers.
共轭半导体聚合物，如聚（3-己基噻吩）（P3HT），有望在有机电子器件的发展中发挥不可或缺的作用；然而，它们的性能受本质上相互关联的因素支配：掺杂剂浓度、载流子迁移率、晶体结构和中尺度形态。我们利用同步加速器X射线散射和电化学阻抗谱来探测电化学掺杂过程中P3HT的晶体结构和电子性质。我们表明，掺杂使晶域产生应变，同时空穴迁移率呈指数增加。我们相信这些观察结果为改进半导体聚合物中电荷传输的理论模型的发展提供了指导。
