Liu Shuyi, Wolf Martin, Kumagai Takashi
Department of Physical Chemistry, Fritz-Haber Institute of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany.
Center for Mesoscopic Sciences, Institute for Molecular Science, Okazaki 444-8585, Japan.
Phys Rev Lett. 2022 May 20;128(20):206803. doi: 10.1103/PhysRevLett.128.206803.
We report on the nanoscale heating mechanism of an ultrathin ZnO film using low-temperature tip-enhanced Raman spectroscopy. Under the resonance condition, intense Stokes and anti-Stokes Raman scattering can be observed for the phonon modes of a two-monolayer (ML) ZnO on an Ag(111) surface, enabling us to monitor local heating at the nanoscale. It is revealed that the local heating originates mainly from inelastic electron tunneling through the electronic resonance when the bias voltage exceeds the conduction band edge of the 2-ML ZnO. When the bias voltage is lower than the conduction band edge, the local heating arises from two different contributions, namely direct optical excitation between the interface state and the conduction band of 2-ML ZnO or injection of photoexcited electrons from an Ag tip into the conduction band. These optical heating processes are promoted by localized surface plasmon excitation. Simultaneous mapping of tip-enhanced Raman spectroscopy and scanning tunneling spectroscopy for 2-ML ZnO including an atomic-scale defect demonstrates visualizing a correlation between the heating efficiency and the local density of states, which further allows us to analyze the local electron-phonon coupling strength with ∼2 nm spatial resolution.
我们报道了利用低温针尖增强拉曼光谱对超薄ZnO薄膜的纳米级加热机制。在共振条件下,对于Ag(111)表面上双层(ML)ZnO的声子模式,可以观察到强烈的斯托克斯和反斯托克斯拉曼散射,这使我们能够监测纳米级的局部加热。结果表明,当偏置电压超过双层ZnO的导带边缘时,局部加热主要源于通过电子共振的非弹性电子隧穿。当偏置电压低于导带边缘时,局部加热来自两种不同的贡献,即双层ZnO的界面态与导带之间的直接光激发或光激发电子从Ag针尖注入到导带中。这些光加热过程由局域表面等离子体激元激发促进。对包含原子尺度缺陷的双层ZnO进行针尖增强拉曼光谱和扫描隧道光谱的同步成像,展示了加热效率与局部态密度之间的相关性,这进一步使我们能够以约2纳米的空间分辨率分析局部电子-声子耦合强度。