Wang Hao, Hu Lianjun, Cao Guanlong, Xia Rongyang, Cao Jingwei, Zhang Jiangliang, Pan Guofeng
School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China.
Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130, People's Republic of China.
ACS Appl Mater Interfaces. 2022 Jun 22;14(24):28321-28336. doi: 10.1021/acsami.2c02837. Epub 2022 Jun 8.
Octyl hydroxamic acid (OHA) was investigated as an inhibitor in HO-based alkaline silica dispersions for the polishing of cobalt (Co) films for interconnect applications. A combination of experiments and density functional theory (DFT) was used to investigate the inhibition effect and the mechanism of OHA on the Co surface. On the basis of the experiments, it can be proven that OHA has an inhibition effect on Co, which came from the inhibition of the cathodic reaction. The X-ray photoelectron spectroscopy (XPS) experiments show that the adsorption of OHA weakened the oxidation of the Co surface and protected the Co surface from corrosion. On the basis of the calculations, it can be proven that the OHA (ion) is most likely to react with the Co surface, and it can adsorb on the Co surface by Co-O bonds. This study provides important microscopic insights for understanding the corrosion protection of Co interconnect metals and helps to explain the corrosion inhibition mechanism of the organic-metal interface during the CMP process.
辛酰氧肟酸(OHA)作为一种抑制剂,被用于基于羟基的碱性二氧化硅分散液中,用于互连应用中钴(Co)薄膜的抛光。采用实验和密度泛函理论(DFT)相结合的方法,研究了OHA对Co表面的抑制作用及其机理。基于实验,可以证明OHA对Co有抑制作用,这源于对阴极反应的抑制。X射线光电子能谱(XPS)实验表明,OHA的吸附减弱了Co表面的氧化,保护Co表面免受腐蚀。基于计算,可以证明OHA(离子)最有可能与Co表面发生反应,并通过Co-O键吸附在Co表面。该研究为理解Co互连金属的腐蚀防护提供了重要的微观见解,并有助于解释化学机械抛光(CMP)过程中有机-金属界面的缓蚀机理。