Ge Jinlong, Cao Yu, Han Hui, Jin Xiaoqi, Liu Jing, Jiao Yuhong, Wang Qiuqin, Gao Yan
School of Materials and Chemical Engineering, Bengbu University, 1866 Cao Shan Road, Bengbu 233030, China.
Anhui Provincial Engineering Research Center of Silicon-Based Materials, Bengbu University, 1866 Cao Shan Road, Bengbu 233030, China.
Nanomaterials (Basel). 2025 Apr 27;15(9):665. doi: 10.3390/nano15090665.
The atomic level polishing of a material surface affects the accuracy of devices and the application of materials. Silica slurries play an important role in chemical mechanical polishing (CMP) by polishing the material surface. In this study, an efficient and controllable Stöber approach was developed to synthesize uniform monodisperse silica spheres with different cationic surfactants. The obtained silica spheres exhibited a regular shape with a particle size of 50-150 nm and were distributed evenly and narrowly. The highest surface specific area of the silica spheres was approximately 1155.9 m/g, which was conducive to the polish process. The monodisperse SiO spheres were applied as abrasives in chemical mechanical polishing. The surface micrographs of silicon wafers during the CMP process were studied using atomic force microscopy (AFM). The results demonstrated that the surface roughness Ra values reduced from 1.07 nm to 0.979 nm and from 1.05 nm to 0.933 nm when using a CTAB-SiO microsphere as an abrasive. These results demonstrate the advantages of monodisperse SiO spheres as abrasive materials in chemical mechanical planarization processes.
材料表面的原子级抛光会影响器件的精度和材料的应用。二氧化硅浆料通过对材料表面进行抛光，在化学机械抛光（CMP）中发挥着重要作用。在本研究中，开发了一种高效且可控的Stöber方法，以合成具有不同阳离子表面活性剂的均匀单分散二氧化硅球体。所获得的二氧化硅球体形状规则，粒径为50 - 150 nm，分布均匀且狭窄。二氧化硅球体的最高比表面积约为1155.9 m/g，这有利于抛光过程。单分散SiO球体被用作化学机械抛光中的磨料。使用原子力显微镜（AFM）研究了CMP过程中硅片的表面微观图像。结果表明，当使用CTAB-SiO微球作为磨料时，表面粗糙度Ra值从1.07 nm降低到0.979 nm，从1.05 nm降低到0.933 nm。这些结果证明了单分散SiO球体作为化学机械平面化过程中磨料材料的优势。
