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锂在半金属γ-GeSe纳米片中的快速嵌入:一种用于锂离子电池应用的新型IV族单硫属化物。

Fast Intercalation of Lithium in Semi-Metallic γ-GeSe Nanosheet: A New Group-IV Monochalcogenide for Lithium-Ion Battery Application.

作者信息

Shu Zheng, Cui Xiangyue, Wang Bowen, Yan Hejin, Cai Yongqing

机构信息

Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China.

出版信息

ChemSusChem. 2022 Aug 5;15(15):e202200564. doi: 10.1002/cssc.202200564. Epub 2022 Jun 9.

Abstract

Existence of van der Waals gaps renders two-dimensional (2D) materials ideal passages of lithium for being used as anode materials. However, the requirement of good conductivity significantly limits the choice of 2D candidates. So far, only graphite is satisfying due to its relatively high conductivity. Recently, a new polymorph of layered germanium selenide (γ-GeSe) was proven to be semimetal in its bulk phase with a higher conductivity than graphite while its monolayer behaves semiconducting. In this work, by using first-principles calculations, the possibility was investigated of using this new group-IV monochalcogenide, γ-GeSe, as anode in Li-ion batteries (LIBs). The studies revealed that the Li atom would form an ionic adsorption with adjacent selenium atoms at the hollow site and exist in cationic state (lost 0.89 e to γ-GeSe). Results of climbing image-nudged elastic band showed the diffusion barrier of Li was 0.21 eV in the monolayer limit, which could activate a relatively fast diffusion even at room temperature on the γ-GeSe surface. The calculated theoretical average voltages ranged from 0.071 to 0.015 V at different stoichiometry of Li GeSe with minor volume variation, suggesting its potential application as anode of LIBs. The predicted moderate binding energy, a low open-circuit voltage (comparable to graphite), and a fast motion of Li suggested that γ-GeSe nanosheet could be chemically exfoliated via Li intercalation and is a promising candidate as the anode material for LIBs.

摘要

范德华间隙的存在使二维(2D)材料成为锂用作负极材料的理想通道。然而,良好导电性的要求显著限制了二维候选材料的选择。到目前为止,只有石墨因其相对较高的导电性而令人满意。最近,一种新的层状硒化锗多晶型物(γ-GeSe)在其体相中被证明是半金属,其导电性高于石墨,而其单层表现为半导体。在这项工作中,通过第一性原理计算,研究了使用这种新的IV族单硫属化物γ-GeSe作为锂离子电池(LIBs)负极的可能性。研究表明,锂原子会在中空位置与相邻的硒原子形成离子吸附,并以阳离子状态存在(向γ-GeSe失去0.89个电子)。爬坡图像推挤弹性带的结果表明,在单层极限下锂的扩散势垒为0.21 eV,这即使在室温下也能在γ-GeSe表面激活相对快速的扩散。在不同化学计量比的Li-GeSe下,计算得到的理论平均电压范围为0.071至0.015 V,体积变化较小,表明其作为LIBs负极的潜在应用。预测的适度结合能、低开路电压(与石墨相当)以及锂的快速移动表明,γ-GeSe纳米片可以通过锂嵌入进行化学剥离,是一种有前途的LIBs负极材料候选物。

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