Department of Solid State Electronics, St. Petersburg State University, 7/9 Universitetskaya nab., 199034 Saint Petersburg, Russia.
Department of Physics, Omsk State Technical University, 11 Mira prosp., 644050 Omsk, Russia.
Int J Mol Sci. 2022 Jun 1;23(11):6207. doi: 10.3390/ijms23116207.
The valence band photoemission (VB PE) spectra of the [Ni(Salen)] molecular complex were measured by ultraviolet, soft X-ray and resonant photoemission (ResPE) using photons with energies ranging from 21.2 eV to 860 eV. It was found that the Ni 3d atomic orbitals' (AOs) contributions are most significant for molecular orbitals (MOs), which are responsible for the low-energy PE band at a binding energy of 3.8 eV in the VB PE spectra. In turn, the PE bands in the binding energies range of 8-16 eV are due to the photoionization of the MOs of the [Ni(Salen)] complex with dominant contributions from C AOs. A detailed consideration was made for the ResPE spectra obtained using photons with absorption resonance energies in the Ni 2p, N 1s, and O 1s Near-Edge X-ray Absorption Fine Structure (NEXAFS) spectra. A strong increase in the intensity of the PE band was found when using photons with an energy 854.4 eV in the Ni 2p NEXAFS spectrum. This finding is due to the high probability of the participator-Auger decay of the Ni excitation and confirms the relationship between the PE band with the Ni 3d-derived MOs.
采用能量范围为 21.2 eV 至 860 eV 的紫外光、软 X 射线和共振光电子发射(ResPE)技术,测量了[Ni(Salen)]分子配合物的价带光电子发射(VB PE)谱。结果发现,Ni 3d 原子轨道(AOs)对分子轨道(MOs)的贡献最大,这是 VB PE 谱中 3.8 eV 结合能处低能光电子发射带的原因。反过来,结合能在 8-16 eV 范围内的光电子发射带是由于 [Ni(Salen)] 配合物的 MO 光离化引起的,其中 C AOs 的贡献占主导地位。对使用吸收共振能量在 Ni 2p、N 1s 和 O 1s 近边 X 射线吸收精细结构(NEXAFS)谱中的 Ni 2p NEXAFS 谱中的光子获得的 ResPE 谱进行了详细考虑。在 Ni 2p NEXAFS 谱中,当使用能量为 854.4 eV 的光子时,发现光电子发射带的强度明显增加。这一发现归因于 Ni 激发的参与 Auger 衰减的高概率,并证实了光电子发射带与 Ni 3d 衍生 MOs 之间的关系。