Song Botao, Gao Bing, Han Pengfei, Yu Yue
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China.
Materials (Basel). 2022 May 25;15(11):3768. doi: 10.3390/ma15113768.
The chemical vapour deposition (CVD) technique could be used to fabricate a silicon carbide (SiC) epitaxial layer. Methyltrichlorosilane (CHSiCl, MTS) is widely used as a precursor for CVD of SiC with a wide range of allowable deposition temperatures. Typically, an appropriate model for the CVD process involves kinetic mechanisms of both gas-phase reactions and surface reactions. Here, we proposed the surface kinetic mechanisms of epitaxial SiC growth for MTS-H gaseous system where the MTS employed as the single precursor diluted in H. The deposition face is assumed to be the Si face with a surface site terminated by an open site or H atom. The kinetic mechanisms for surface reactions proposed in this work for MTS-H gaseous system of epitaxial growth of SiC by CVD technique from mechanisms proposed for H-Si-C-Cl system are discussed in detail. Predicted components of surface species and growth rates at different mechanisms are discussed in detail.
化学气相沉积（CVD）技术可用于制造碳化硅（SiC）外延层。甲基三氯硅烷（CHSiCl，MTS）被广泛用作SiC CVD的前驱体，其允许的沉积温度范围很广。通常，CVD过程的合适模型涉及气相反应和表面反应的动力学机制。在此，我们提出了MTS-H气体体系外延生长SiC的表面动力学机制，其中MTS作为单一前驱体在H中稀释。假设沉积面为Si面，表面位点由开放位点或H原子终止。本文从H-Si-C-Cl体系提出的机制出发，详细讨论了通过CVD技术外延生长SiC的MTS-H气体体系表面反应的动力学机制。详细讨论了不同机制下表面物种的预测成分和生长速率。
