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丘脑前核深部脑刺激中刺激触点的阻抗特性及其与难治性癫痫患者癫痫发作结果的关系

Impedance Characteristics of Stimulation Contacts in Deep Brain Stimulation of the Anterior Nucleus of the Thalamus and Its Relationship to Seizure Outcome in Patients With Refractory Epilepsy.

作者信息

Möttönen Timo, Peltola Jukka, Järvenpää Soila, Haapasalo Joonas, Lehtimäki Kai

机构信息

Department of Neurosciences and Rehabilitation, Tampere University Hospital, Tampere, Finland.

Department of Neurosciences and Rehabilitation, Tampere University Hospital, Tampere, Finland.

出版信息

Neuromodulation. 2023 Dec;26(8):1733-1741. doi: 10.1016/j.neurom.2022.04.047. Epub 2022 Jun 7.

Abstract

BACKGROUND

Deep brain stimulation (DBS) of the anterior nucleus of the thalamus (ANT) is an emerging form of adjunctive therapy in focal refractory epilepsy. Unlike conventional DBS targets, the ANT is both encapsulated by white matter layers and located immediately adjacent to the cerebrospinal fluid (CSF) space. Owing to the location of the ANT, implantation has most commonly been performed using a transventricular trajectory. Previous studies suggest different electrical conductivity between gray matter, white matter, and CSF.

OBJECTIVES

In this study, we asked whether therapeutic impedance values from a fully implanted DBS device could be used to deduce the actual location of the active contact to optimize the stimulation site. Secondly, we tested whether impedance values correlate with patient outcomes.

MATERIALS AND METHODS

A total of 16 patients with ANT-DBS for refractory epilepsy were evaluated in this prospective study. Therapeutic impedance values were recorded on regular outpatient clinic visits. Contact locations were analyzed using delayed contrast-enhanced postoperative computed tomography-3T magnetic resonance imaging short tau inversion recovery fusion images previously shown to demonstrate anatomical details around the ANT.

RESULTS

Transventricularly implanted contacts immediately below the CSF surface showed overall lower and slightly decreasing impedances over time compared with higher and more stable impedances in contacts with deeper parenchymal location. Impedance values in transventricularly implanted contacts in the ANT were significantly lower than those in transventricularly implanted contacts outside the ANT or extraventricularly implanted contacts that were typically at the posterior/inferior/lateral border of the ANT. Increasing contact distance from the CSF surface was associated with a linear increase in therapeutic impedance. We also found that therapeutic impedance values were significantly lower in contacts with favorable therapy response than in nonresponding contacts. Finally, we observed a significant correlation between the left- and right-side averaged impedance and the reduction of the total number of seizures.

CONCLUSIONS

Valuable information can be obtained from the noninvasive measurement of therapeutic impedances. The selection of active contacts to target stimulation to the anterior nucleus may be guided by therapeutic impedance measurements to optimize outcome.

摘要

背景

丘脑前核(ANT)的深部脑刺激(DBS)是局灶性难治性癫痫辅助治疗的一种新兴形式。与传统的DBS靶点不同,ANT既被白质层包裹,又紧邻脑脊液(CSF)间隙。由于ANT的位置,植入通常采用经脑室路径进行。先前的研究表明灰质、白质和脑脊液之间存在不同的电导率。

目的

在本研究中,我们探讨了完全植入的DBS装置的治疗阻抗值是否可用于推断有源触点的实际位置,以优化刺激部位。其次,我们测试了阻抗值与患者预后是否相关。

材料与方法

在这项前瞻性研究中,共评估了16例接受ANT-DBS治疗难治性癫痫的患者。在定期门诊就诊时记录治疗阻抗值。使用延迟对比增强术后计算机断层扫描-3T磁共振成像短tau反转恢复融合图像分析触点位置,这些图像先前已被证明可显示ANT周围的解剖细节。

结果

与位于更深实质位置的触点相比,紧邻CSF表面经脑室植入的触点总体阻抗较低,且随时间略有下降,而后者的阻抗较高且更稳定。ANT经脑室植入触点的阻抗值显著低于ANT外经脑室植入触点或通常位于ANT后/下/外侧边界的脑室外植入触点。与CSF表面的触点距离增加与治疗阻抗呈线性增加相关。我们还发现,治疗反应良好触点的治疗阻抗值显著低于无反应触点。最后,我们观察到左右侧平均阻抗与癫痫发作总数减少之间存在显著相关性。

结论

从治疗阻抗的无创测量中可以获得有价值的信息。通过治疗阻抗测量指导有源触点的选择,将刺激靶点定位于前核,可能会优化治疗效果。

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