Jin Ming, Tao Yuansheng, Gao Xin, Wei Ziyi, Shu Haowen, Yin Jianbo, Peng Hailin, Wang Xingjun
Opt Lett. 2022 Jun 15;47(12):3075-3078. doi: 10.1364/OL.459876.
A silicon-based graphene modulator, holding the advantages of high modulation efficiency, high speed, and being ultra-compact, is regarded as a promising candidate for next-generation communication networks. Although the properties involved for optical communications have been widely studied, very few works evaluate the performance required for the microwave scenarios. Here, for the first time, to the best of our knowledge, the linearity of silicon-based graphene electro-absorption modulator (EAM) is analyzed and experimentally characterized through spurious free dynamic range (SFDR) with 82.5 dB·Hz and 100.3 dB·Hz. Further calculations reveal that a higher SFDR value could be achieved through optimizing the bias voltage. Variations of capacitor structural parameters have little influence on the linearity. Such performance leads to the first, to the best of our knowledge, demonstration of a Gbps-level pulse-amplitude 4-level modulation scheme (PAM-4) eye diagram in a silicon-based graphene modulator.
一种基于硅的石墨烯调制器，具有调制效率高、速度快和超紧凑的优点，被认为是下一代通信网络的有前途的候选者。尽管与光通信相关的特性已被广泛研究，但很少有工作评估微波场景所需的性能。在此，据我们所知，首次通过82.5 dB·Hz和100.3 dB·Hz的无杂散动态范围（SFDR）对基于硅的石墨烯电吸收调制器（EAM）的线性进行了分析和实验表征。进一步的计算表明，通过优化偏置电压可以实现更高的SFDR值。电容器结构参数的变化对线性影响很小。据我们所知，这样的性能首次在基于硅的石墨烯调制器中实现了Gbps级脉冲幅度4电平调制方案（PAM-4）眼图的演示。
