Wang Haobin, Huang Shuyi, Kuang Haoze, Zou Taoyu, Rajagopalan Pandey, Wang Xiaozhi, Li Yubo, Jin Hao, Dong Shurong, Zhou Hang, Hasan Tawfique, Occhipinti Luigi G, Kim Jong Min, Luo Jikui
Key Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China.
International Joint Innovation Center, Zhejiang University, Haining 314400, China.
ACS Appl Mater Interfaces. 2022 Jul 6;14(26):30410-30419. doi: 10.1021/acsami.2c06374. Epub 2022 Jun 26.
The triboelectric effect occurs when two dissimilar materials are in physical contact, attributed to the combination of contact electrification (CE) and electrostatic induction. It has been extensively explored for the development of high-performance triboelectric nanogenerators (TENGs). In this paper, we report on, besides the CE-related charge generation, an additional charge generation phenomenon associated with the modulation of the p-n junction when two semiconductor materials [methylammonium lead iodide (MAPI) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)] are put in contact and separated dynamically. The electrical outputs generated by the CE effect are determined by the surface potential difference between the two friction materials, while the ones induced by the p-n junction modulation are determined by the dynamic variations in the depletion widths of the two semiconductor friction materials. The outputs generated by the CE effect and the p-n junction effect are well separated in time scale; the p-n junction modulation contributes ∼20% of the total charge generated and could be varied by changing the chemical composition of the semiconductors. The results may provide an alternative method for the development of high-performance TENGs by utilizing this additional p-n junction modulation effect.
当两种不同的材料发生物理接触时，会产生摩擦电效应，这是由接触起电（CE）和静电感应共同作用引起的。摩擦电效应已被广泛研究用于高性能摩擦电纳米发电机（TENG）的开发。在本文中，我们报道了，除了与CE相关的电荷产生外，当两种半导体材料[甲基铵碘化铅（MAPI）和聚（3,4-乙撑二氧噻吩）-聚（苯乙烯磺酸盐）（PEDOT:PSS）]动态接触并分离时，还存在一种与p-n结调制相关的额外电荷产生现象。由CE效应产生的电输出由两种摩擦材料之间的表面电势差决定，而由p-n结调制引起的电输出则由两种半导体摩擦材料耗尽层宽度的动态变化决定。由CE效应和p-n结效应产生的输出在时间尺度上得到了很好的分离；p-n结调制对总电荷产生的贡献约为20%，并且可以通过改变半导体的化学成分来改变。这些结果可能为利用这种额外的p-n结调制效应开发高性能TENG提供一种替代方法。
