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狄拉克半金属CdAs中表面态与体态解耦的证据。

Evidence of decoupling of surface and bulk states in Dirac semimetal CdAs.

作者信息

Yu W, Rademacher D X, Valdez N R, Rodriguez M A, Nenoff T M, Pan W

机构信息

Sandia National Laboratories, Albuquerque, New Mexico NM-87185, United States of America.

Sandia National Laboratories, Livermore, California CA-94551, United States of America.

出版信息

Nanotechnology. 2022 Jul 25;33(41). doi: 10.1088/1361-6528/ac7c25.

Abstract

Dirac semimetals have attracted a great deal of current interests due to their potential applications in topological quantum computing, low-energy electronic devices, and single photon detection in the microwave frequency range. Herein are results from analyzing the low magnetic () field weak-antilocalization behaviors in a Dirac semimetal CdAsthin flake device. At high temperatures, the phase coherence lengthfirst increases with decreasing temperature () and follows a power law dependence of∝. Below ∼3 K,tends to saturate to a value of ∼180 nm. Another fitting parameter, which is associated with independent transport channels, displays a logarithmic temperature dependence for > 3 K, but also tends to saturate below ∼3 K. The saturation value, ∼1.45, is very close to 1.5, indicating three independent electron transport channels, which we interpret as due to decoupling of both the top and bottom surfaces as well as the bulk. This result, to our knowledge, provides first evidence that the surfaces and bulk states can become decoupled in electronic transport in Dirac semimetal CdAs.

摘要

狄拉克半金属因其在拓扑量子计算、低能电子器件以及微波频段单光子探测等方面的潜在应用,目前引起了广泛关注。本文给出了对狄拉克半金属CdAs薄片器件中低磁场()下弱反局域化行为的分析结果。在高温下,相位相干长度首先随温度()降低而增加,并遵循∝的幂律依赖关系。在约3 K以下,趋于饱和到约180 nm的值。另一个与独立输运通道相关的拟合参数,在> 3 K时呈现对数温度依赖性,但在约3 K以下也趋于饱和。饱和值约为1.45,非常接近1.5,表明存在三个独立的电子输运通道,我们将其解释为由于顶面和底面以及体相的解耦。据我们所知,这一结果首次证明了在狄拉克半金属CdAs的电子输运中,表面态和体相态可以发生解耦。

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