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量子限制CdAs薄膜中拓扑表面态的非凡热电特性

Extraordinary Thermoelectric Properties of Topological Surface States in Quantum-Confined CdAs Thin Films.

作者信息

Ouyang Wenkai, Lygo Alexander C, Chen Yubi, Zheng Huiyuan, Vu Dung, Wooten Brandi L, Liang Xichen, Heremans Joseph P, Stemmer Susanne, Liao Bolin

机构信息

Department of Mechanical Engineering, University of California, Santa Barbara, CA, 93106, USA.

Materials Department, University of California, Santa Barbara, CA, 93106, USA.

出版信息

Adv Mater. 2024 Jul;36(28):e2311644. doi: 10.1002/adma.202311644. Epub 2024 May 9.

Abstract

Topological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological surface states on topological Dirac semimetals remains less explored. This work systematically examines thermoelectric transport in a series of topological Dirac semimetal CdAs thin films grown by molecular beam epitaxy. Surprisingly, significantly enhanced Seebeck effect and anomalous Nernst effect are found at cryogenic temperatures when the CdAs layer is thin. In particular, a peak Seebeck coefficient of nearly 500 µV K and a corresponding thermoelectric power factor over 30 mW K m are observed at 5 K in a 25-nm-thick sample. Combining angle-dependent quantum oscillation analysis, magnetothermoelectric measurement, transport modeling, and first-principles simulation, the contributions from bulk and surface conducting channels are isolated and the unusual thermoelectric properties are attributed to the topological surface states. The analysis showcases the rich thermoelectric transport physics in quantum-confined topological Dirac semimetal thin films and suggests new routes to achieving high thermoelectric performance at cryogenic temperatures.

摘要

拓扑绝缘体和半金属已被证明具有引人入胜的热电特性,有望用于能量收集和冷却应用。然而,与拓扑狄拉克半金属上的费米弧拓扑表面态相关的热电输运仍有待深入研究。这项工作系统地研究了通过分子束外延生长的一系列拓扑狄拉克半金属CdAs薄膜中的热电输运。令人惊讶的是,当CdAs层很薄时,在低温下发现了显著增强的塞贝克效应和反常能斯特效应。特别是,在一个25纳米厚的样品中,在5K时观察到近500μVK的峰值塞贝克系数和超过30mWKm的相应热电功率因子。结合角度相关的量子振荡分析、磁热电测量、输运建模和第一性原理模拟,分离了体导电通道和表面导电通道的贡献,并将异常的热电特性归因于拓扑表面态。该分析展示了量子限制拓扑狄拉克半金属薄膜中丰富的热电输运物理,并提出了在低温下实现高热电性能的新途径。

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