Transport properties of MoS/V(Bz) and graphene/V(Bz) vdW junctions tuned by bias and gate voltages.

The MoS/V(Bz) and graphene/V(Bz) vdW junctions are designed and the transport properties of their four-terminal devices are comparatively investigated based on density functional theory (DFT) and the nonequilibrium Green's function (NEGF) technique. The MoS and graphene nanoribbons act as the source-to-drain channel and the spin-polarized one-dimensional (1D) benzene-V multidecker complex nanowire (V(Bz)) serves as the gate channel. Gate voltages applied on V(Bz) exert different influences of electron transport on MoS/V(Bz) and graphene/V(Bz). In MoS/V(Bz), the interplay of source and gate bias potentials could induce promising properties such as negative differential resistance (NDR) behavior, output/input current switching, and spin-polarized currents. In contrast, the gate bias plays an insignificant effect on the transport along graphene in graphene/V(Bz). This dissimilarity is attributed to the fact that the conductivity follows the sequence of MoS < V(Bz) < graphene. These transport characteristics are examined by analyzing the conductivity, the currents, the local density of states (LDOS), and the transmission spectra. These results are valuable in designing multi-terminal nanoelectronic devices.