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使用单一前驱体在含氧衬底上合成1T相二硒化钨。

Synthesis of 1T WSe on an Oxygen-Containing Substrate Using a Single Precursor.

作者信息

Park Young Jin, So Hee-Soo, Hwang Hyuntae, Jeong Da Sol, Lee Hoon Ju, Lim Jongsun, Kim Chang Gyoun, Shin Hyeon Suk

机构信息

Advanced Materials Division, Korea Research Institute of Chemical Technology, P.O. Box 107, Yuseoung, Deajeon 305-600, Korea.

出版信息

ACS Nano. 2022 Jul 26;16(7):11059-11065. doi: 10.1021/acsnano.2c03762. Epub 2022 Jul 1.

Abstract

The metallic property of metastable 1T' WSe and its promising catalytic performance have attracted considerable interest. A hot injection method has been used to synthesize 1T' WSe with a three-dimensional morphology; however, this method requires two or more precursors and long-chain ligands, which inhibit the catalytic performance. Here, we demonstrate the synthesis of 1T' WSe on a substrate by a simple heating-up method using a single precursor, tetraethylammonium tetraselenotungstate [(EtN)WSe]. The triethylamine produced after the reaction is an electron donor that yields negatively charged WSe, which is stabilized by triethylammonium cations as intercalants between layers and induces 1T' WSe. The purity of 1T' WSe is higher on oxygen-containing crystalline substrates than amorphous substrates because the strong adhesion between WSe and the substrate can produce sufficient triethylammonium (TEA) intercalation. Among the oxygen-containing crystal substrates, the substrate with a lower lattice mismatch with 1T' WSe showed higher 1T' purity due to the uniform TEA intercalation. Furthermore, 1T' WSe on carbon cloth exhibited a more enhanced catalytic performance in the hydrogen evolution reaction (197 mV at 10 mA/cm) than has been reported previously.

摘要

亚稳态1T'相WSe₂的金属特性及其优异的催化性能引起了广泛关注。热注入法已被用于合成具有三维形貌的1T'相WSe₂;然而,该方法需要两种或更多前驱体以及长链配体,这会抑制其催化性能。在此,我们展示了一种通过简单加热法,使用单一前驱体四乙基铵四硒化钨[(Et₄N)₂WSe₄]在基底上合成1T'相WSe₂的方法。反应后产生的三乙胺是一种电子供体,可生成带负电荷的WSe₂,其通过三乙铵阳离子作为层间插层剂得以稳定,并诱导生成1T'相WSe₂。在含氧晶体基底上1T'相WSe₂的纯度高于非晶基底,因为WSe₂与基底之间的强附着力能够产生足够的三乙铵(TEA)插层。在含氧晶体基底中,与1T'相WSe₂晶格失配较低的基底由于TEA插层均匀,显示出更高的1T'相纯度。此外,碳布上的1T'相WSe₂在析氢反应中表现出比先前报道更强的催化性能(在10 mA/cm²时为197 mV)。

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