Chen Wang, Xie Xuedong, Zong Junyu, Chen Tong, Lin Dongjin, Yu Fan, Jin Shaoen, Zhou Lingjie, Zou Jingyi, Sun Jian, Xi Xiaoxiang, Zhang Yi
National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing, 210093, China.
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Sci Rep. 2019 Feb 25;9(1):2685. doi: 10.1038/s41598-019-39238-7.
Two-dimensional (2D) transition metal dichalcogenides MX (M = Mo, W, X = S, Se, Te) attracts enormous research interests in recent years. Its 2H phase possesses an indirect to direct bandgap transition in 2D limit, and thus shows great application potentials in optoelectronic devices. The 1T' crystalline phase transition can drive the monolayer MX to be a 2D topological insulator. Here we realized the molecular beam epitaxial (MBE) growth of both the 1T' and 2H phase monolayer WSe on bilayer graphene (BLG) substrate. The crystalline structures of these two phases were characterized using scanning tunneling microscopy. The monolayer 1T'-WSe was found to be metastable, and can transform into 2H phase under post-annealing procedure. The phase transition temperature of 1T'-WSe grown on BLG is lower than that of 1T' phase grown on 2H-WSe layers. This thermo-driven crystalline phase transition makes the monolayer WSe to be an ideal platform for the controlling of topological phase transitions in 2D materials family.
近年来,二维(2D)过渡金属二硫属化物MX(M = Mo、W,X = S、Se、Te)引起了极大的研究兴趣。其2H相在二维极限下具有从间接带隙到直接带隙的转变,因此在光电器件中显示出巨大的应用潜力。1T'晶相转变可驱动单层MX成为二维拓扑绝缘体。在此,我们实现了在双层石墨烯(BLG)衬底上分子束外延(MBE)生长1T'和2H相单层WSe。利用扫描隧道显微镜对这两个相的晶体结构进行了表征。发现单层1T'-WSe是亚稳态的,并且在退火后处理过程中可以转变为2H相。在BLG上生长的1T'-WSe的相变温度低于在2H-WSe层上生长的1T'相的相变温度。这种热驱动的晶相转变使单层WSe成为二维材料家族中控制拓扑相变的理想平台。