Zhang Wen-Han, Chen Liang, Zou Ze-Ping, Nan Zi-Ang, Shi Jue-Li, Luo Qing-Peng, Hui Yong, Li Kai-Xuan, Wang Yan-Jie, Zhou Jian-Zhang, Yan Jia-Wei, Mao Bing-Wei
State Key Laboratory for Physical Chemistry of Solid Surfaces, Tan Kah Kee Innovation Laboratory, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
ACS Appl Mater Interfaces. 2022 Jul 20;14(28):31911-31919. doi: 10.1021/acsami.2c05956. Epub 2022 Jul 7.
The quality of perovskite films plays a crucial role in the performance of the corresponding devices. However, the commonly employed perovskite polycrystalline films often contain a high density of defects created during film production and cell operation, including unsaturated coordinated Pb and Pb, which can act as nonradiative recombination centers, thus reducing open-circuit voltage. Effectively eliminating both kinds of defects is an important subject of research to improve the power conversion efficiency (PCE). Here, we employ hydrogen octylphosphonate potassium (KHOP) as a multifunctional additive to passivate defects. The molecule is introduced into perovskite precursor solution to regulate the perovskite film growth process by coordinating with Pb, which can not only passivate the Pb defect but also effectively inhibit the production of Pb; at the same time, the presence of K reduces device hysteresis by inhibiting I migration and finally realizes double passivation of Pb and I-based defects. Moreover, the moderate hydrophobic alkyl chain in the molecule improves the moisture stability. Ultimately, the optimal efficiency can reach 22.21%.
钙钛矿薄膜的质量对相应器件的性能起着至关重要的作用。然而,常用的钙钛矿多晶薄膜在薄膜制备和电池运行过程中通常含有高密度的缺陷,包括未饱和配位的Pb和Pb,它们可作为非辐射复合中心,从而降低开路电压。有效消除这两种缺陷是提高功率转换效率(PCE)的一个重要研究课题。在此,我们使用辛基膦酸钾(KHOP)作为多功能添加剂来钝化缺陷。将该分子引入钙钛矿前驱体溶液中,通过与Pb配位来调节钙钛矿薄膜的生长过程,这不仅可以钝化Pb缺陷,还能有效抑制Pb的产生;同时,K的存在通过抑制I迁移降低了器件的滞后现象,最终实现了对Pb和I基缺陷的双重钝化。此外,分子中适度的疏水烷基链提高了湿度稳定性。最终,最佳效率可达22.21%。