AgSe 量子点中的双近红外发射 Pb 掺杂用于宽带微型发光二极管。
Dual near infrared emission in AgSe quantum dots Pb doping for broadband mini light-emitting diodes.
机构信息
College of Chemistry, Chemical Engineering and Materials Science, Key Laboratory of Molecular and Nano Probes, Ministry of Education, Collaborative Innovation Center of Functionalized Probes for Chemical Imaging in Universities of Shandong, Institutes of Biomedical Sciences, Shandong Normal University, Jinan 250014, China.
School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China.
出版信息
Chem Commun (Camb). 2022 Jul 26;58(60):8432-8435. doi: 10.1039/d2cc02804b.
Dual emission almost covering the entire NIR-II region with the maximum full width at half maximum of 542 nm was achieved by doping small amounts of Pb ions into AgSe quantum dots, which to the best of our knowledge has not been realized for continuous tunable dual NIR emission in Ag-based QDs. The fabricated broadband NIR mini light-emitting diodes based on the Pb-doped AgSe QDs exhibit potential applications for highly sensitive and multispectral non-invasive imaging and NIR lighting.
通过在 AgSe 量子点中掺杂少量 Pb 离子，实现了双发射，几乎覆盖了整个近红外二区，最大半峰全宽为 542nm。据我们所知，这在基于 Ag 的量子点中还没有实现连续可调谐的双近红外发射。基于 Pb 掺杂 AgSe 量子点制备的宽带近红外微型发光二极管在高灵敏度、多光谱非侵入式成像和近红外照明方面具有潜在的应用。
Zotero 插件