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Highly Electron-Doped TaON Single-Crystal Growth by a High-Pressure Flux Method.

作者信息

Ishida Kohdai, Tassel Cédric, Kato Daichi, Ubukata Hiroki, Murayama Kantaro, Murakami Taito, Yashima Masatomo, Higo Yuji, Tange Yoshinori, Phelan W Adam, McQueen Tyrel M, Kageyama Hiroshi

机构信息

Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan.

Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai 987-8579, Japan.

出版信息

Inorg Chem. 2022 Jul 25;61(29):11118-11123. doi: 10.1021/acs.inorgchem.2c00897. Epub 2022 Jul 8.

DOI:10.1021/acs.inorgchem.2c00897
PMID:35802135
Abstract

Transition-metal oxynitrides have a variety of functions such as visible light-responsive catalysts and dielectric materials, but acquiring single crystals necessary to understand inherent properties is difficult and is limited to relatively small sizes (<10 μm) because they easily decompose at high temperatures. Here, we have succeeded in growing platelet single crystals of TaON with a typical size of 50 × 100 × 10 μm under a high pressure and high temperature (6 GPa and 1400 °C) using a LiCl flux. Such a harsh condition, in contrast to powder samples synthesized under mild conditions, resulted in the introduction of a large amount of oxygen vacancies ( = 0.06 in TaON) into the crystal, providing a metallic behavior with a large anisotropy of ρ/ρ ∼ 10. Low-temperature oxygen annealing allows for a single-crystal-to-single-crystal transformation to obtain fully oxidized TaON (yellow) crystals. Needle-like crystals can be obtained when NHCl is used as a flux. Furthermore, black HfON single crystals are also grown, suggesting that the high-pressure flux method is widely applicable to other transition-metal oxynitrides, with extensive carrier control.

摘要

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