Shen Xia, Li Pu, Guo Pengfei, Yu Kin Man
College of Physics and Optoelectronics, Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China.
Department of Physics, City University of Hong Kong, Kowloon, Hong Kong 999077, People's Republic of China.
Nanotechnology. 2022 Aug 1;33(43). doi: 10.1088/1361-6528/ac800b.
Since the emergence of one-dimensional nanostructures, in particular the bandgap-graded semiconductor nanowires/ribbons or heterostructures, lots of attentions have been devoted to unraveling their intriguing properties and finding applications for future developments in optical communications and integrated optoelectronic devices. In particular, the ability to modulate the bandgap along a single nanostructure greatly enhances their functionalities in optoelectronics, and hence these studies are essential to pave the way for future high-integrated devices and circuits. Herein, we focus on a brief review on recent advances about the synthesis through a magnetic-pulled chemical vapor deposition approach, crystal structure and the unique optical and electronic properties of on-nanostructures semiconductors, including axial nanowire heterostructures, asymmetrical/symmetric bandgap gradient nanowires, lateral heterostructure nanoribbons, lateral bandgap graded ribbons. Moreover, recent developments in applications using low-dimensional bandgap modulated structures, especially in bandgap-graded nanowires and heterostructures, are summarized, including multicolor lasers, waveguides, white-light sources, photodetectors, and spectrometers, where the main strategies and unique features are addressed. Finally, future outlook and perspectives for the current challenges and the future opportunities of one-dimensional nanostructures with bandgap engineering are discussed to provide a roadmap future development in the field.
自从一维纳米结构出现以来，特别是带隙渐变的半导体纳米线/纳米带或异质结构出现以来，人们投入了大量精力来揭示它们的有趣特性，并为光通信和集成光电器件的未来发展寻找应用。特别是，沿着单个纳米结构调制带隙的能力极大地增强了它们在光电子学中的功能，因此这些研究对于为未来的高集成器件和电路铺平道路至关重要。在此，我们重点简要回顾通过磁控化学气相沉积方法进行合成的最新进展、纳米结构半导体的晶体结构以及独特的光学和电子特性，包括轴向纳米线异质结构、不对称/对称带隙梯度纳米线、横向异质结构纳米带、横向带隙渐变带。此外，总结了使用低维带隙调制结构的应用的最新进展，特别是在带隙渐变纳米线和异质结构中的应用，包括多色激光器、波导、白光源、光电探测器和光谱仪，并阐述了其主要策略和独特特性。最后，讨论了带隙工程中一维纳米结构当前面临的挑战和未来机遇的未来展望和前景，以为该领域的未来发展提供路线图。
