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揭示低于临界电流的邻近结中的约瑟夫森涡旋动力学。

Revealing Josephson Vortex Dynamics in Proximity Junctions below Critical Current.

作者信息

Stolyarov Vasily S, Ruzhitskiy Vsevolod, Hovhannisyan Razmik A, Grebenchuk Sergey, Shishkin Andrey G, Skryabina Olga V, Golovchanskiy Igor A, Golubov Alexander A, Klenov Nikolay V, Soloviev Igor I, Kupriyanov Mikhail Yu, Andriyash Alexander, Roditchev Dimitri

机构信息

Advanced Mesoscience and Nanotechnology Centre, Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia.

Dukhov Research Institute of Automatics (VNIIA), 127055 Moscow, Russia.

出版信息

Nano Lett. 2022 Jul 27;22(14):5715-5722. doi: 10.1021/acs.nanolett.2c00647. Epub 2022 Jul 12.

DOI:10.1021/acs.nanolett.2c00647
PMID:35820103
Abstract

Made of a thin non-superconducting metal (N) sandwiched by two superconductors (S), SNS Josephson junctions enable novel quantum functionalities by mixing up the intrinsic electronic properties of N with the superconducting correlations induced from S by proximity. Electronic properties of these devices are governed by Andreev quasiparticles (Andreev, A. 1965, 20, 1490) which are absent in conventional SIS junctions whose insulating barrier (I) between the two S electrodes owns no electronic states. Here we focus on the Josephson vortex (JV) motion inside Nb-Cu-Nb proximity junctions subject to electric currents and magnetic fields. The results of local (magnetic force microscopy) and global (transport) experiments provided simultaneously are compared with our numerical model, revealing the existence of several distinct dynamic regimes of the JV motion. One of them, identified as a fast hysteretic entry/escape below the critical value of Josephson current, is analyzed and suggested for low-dissipative logic and memory elements.

摘要

SNS约瑟夫森结由夹在两个超导体(S)之间的薄非超导金属(N)制成,通过将N的本征电子特性与由S通过邻近效应诱导的超导相关性混合,实现了新颖的量子功能。这些器件的电子特性由安德列夫准粒子(安德列夫,A. 1965年,20卷,1490页)控制,而在传统的SIS结中不存在这种准粒子,因为两个S电极之间的绝缘势垒(I)没有电子态。在这里,我们关注铌 - 铜 - 铌邻近结内受电流和磁场影响的约瑟夫森涡旋(JV)运动。将同时提供的局部(磁力显微镜)和全局(输运)实验结果与我们的数值模型进行比较,揭示了JV运动的几种不同动态模式的存在。其中一种模式被确定为在约瑟夫森电流临界值以下的快速滞后进入/逃逸,对其进行了分析,并建议用于低耗散逻辑和存储元件。

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引用本文的文献

1
Current induced hidden states in Josephson junctions.约瑟夫森结中电流诱导的隐藏态。
Nat Commun. 2024 Sep 14;15(1):8059. doi: 10.1038/s41467-024-52271-z.