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四方钨青铜弛豫铁电体中的主动和被动缺陷

Active and passive defects in tetragonal tungsten bronze relaxor ferroelectrics.

作者信息

Wang Bi-Xia, Krogstad M J, Zheng H, Osborn R, Rosenkranz S, Phelan D

机构信息

Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, United States of America.

Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, United States of America.

出版信息

J Phys Condens Matter. 2022 Aug 4;34(40). doi: 10.1088/1361-648X/ac8261.

DOI:10.1088/1361-648X/ac8261
PMID:35853443
Abstract

Tetragonal tungsten bronze (TTB) based oxides constitute a large family of dielectric materials which are known to exhibit complex distortions producing incommensurately modulated superstructures as well as significant local deviations from their average symmetry. The local deviations produce diffuse scattering in diffraction experiments. The structure as well as the charge dynamics of these materials are anticipated to be sensitive to defects, such as cation or oxygen vacancies. In this work, in an effort to understand how the structural and charge dynamical properties respond to these two types of vacancy defects, we have performed measurements of dielectric susceptibilities and single crystal diffraction experiments of two types of TTB materials with both 'filled' (BaNdFeNbOand BaPrFeNbO) and 'unfilled' (SrBaNbO) cation sublattices. We also perform these measurements before and after oxygen annealing, which alters the oxygen vacancy concentrations. Surprisingly, we find that many of the diffuse scattering features that are present in the unfilled structure are also present in the filled structure, suggesting that the random fields and disorder that are characteristic of the unfilled structure are not responsible for many of the local structural features that are reflected in the diffuse scattering. Oxygen annealing clearly affected both color and dielectric properties, consistent with a diminishment of the oxygen vacancy concentration, but had little effect on observed diffuse patterns.

摘要

四方钨青铜(TTB)基氧化物构成了一大类介电材料,已知这类材料会表现出复杂的畸变,产生非公度调制的超结构以及与其平均对称性存在显著的局部偏差。这些局部偏差在衍射实验中会产生漫散射。预计这些材料的结构以及电荷动力学对诸如阳离子或氧空位等缺陷很敏感。在这项工作中,为了了解结构和电荷动力学性质如何响应这两种类型的空位缺陷,我们对两种具有“填充”(BaNdFeNbO和BaPrFeNbO)和“未填充”(SrBaNbO)阳离子亚晶格的TTB材料进行了介电常数测量和单晶衍射实验。我们还在氧退火前后进行了这些测量,氧退火会改变氧空位浓度。令人惊讶的是,我们发现未填充结构中存在的许多漫散射特征在填充结构中也存在,这表明未填充结构所特有的随机场和无序性并非许多在漫散射中反映出的局部结构特征的原因。氧退火明显影响了颜色和介电性质,这与氧空位浓度的降低一致,但对观察到的漫散射图案影响很小。

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