Yang Bian, Zhang Jiayu, Lou Xiaojie, Gao Yangfei, Shi Peng, Yang Yaodong, Yang Man, Cui Jie, Wei Lingling, Sun Shaodong
Engineering Research Center of Conducting Materials and Composite Technology, Ministry of Education; Shaanxi Engineering Research Center of Metal-Based Heterogeneous Materials and Advanced Manufacturing Technology; Shaanxi Province Key Laboratory for Electrical Materials and Infiltration Technology; School of Materials Science and Engineering, Xi'an University of Technology, Xi'an, Shaanxi 710048, People's Republic of China.
Frontier Institute of Science and Technology, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
ACS Appl Mater Interfaces. 2022 Aug 3;14(30):34855-34866. doi: 10.1021/acsami.2c06889. Epub 2022 Jul 22.
Dielectric ceramics with relaxor characteristics are promising candidates to meet the demand for capacitors of next-generation pulse devices. Herein, a lead-free Sb-modified (SrBaGd) (NbTaSb)O (SBGNT-based) tungsten bronze ceramic is designed and fabricated for high-density energy storage capacitors. Using a B-site engineering strategy to enhance the relaxor characteristics, Sb incorporation could induce the structural distortion of the polar unit BO and order-disorder distribution of B-site cations as well as the modulation of polarization in the SBGNT-based tungsten bronze ceramic. More importantly, benefiting from the effective inhibition of abnormal growth of non-equiaxed grains, Sb introduction into SBGNT-based ceramics could effectively suppress the conductivity and leakage current density, enhancing the breakdown strength, as proved by the electrical impedance spectra. Consequently, a remarkable comprehensive performance via balancing recoverable energy density (∼3.26 J/cm) and efficiency (91.95%) is realized simultaneously at 380 kV/cm, which surpasses that of the pristine sample without the Sb dopant (2.75 J/cm and 80.5%, respectively). The corresponding ceramics display superior stability in terms of fatigue (10 cycles), frequency (1∼200 Hz), and temperature (20∼140 °C). Further charge-discharge analysis indicates that a high power density (89.57 MW/cm) and an impressive current density (1194.27 A/cm) at 150 kV/cm are achieved simultaneously. All of the results demonstrate that the tungsten bronze relaxors are indeed gratifying lead-free candidate materials for dielectric energy storage applications.
具有弛豫特性的介电陶瓷是满足下一代脉冲器件对电容器需求的有前途的候选材料。在此,设计并制备了一种用于高密度储能电容器的无铅Sb改性(SrBaGd)(NbTaSb)O(基于SBGNT)钨青铜陶瓷。采用B位工程策略增强弛豫特性,掺入Sb可引起极性单元BO的结构畸变、B位阳离子的有序-无序分布以及基于SBGNT的钨青铜陶瓷中极化的调制。更重要的是,得益于对非等轴晶粒异常生长的有效抑制,向基于SBGNT的陶瓷中引入Sb可有效抑制电导率和漏电流密度,提高击穿强度,这由电阻抗谱证明。因此,在380 kV/cm下同时实现了通过平衡可恢复能量密度(约3.26 J/cm³)和效率(91.95%)的显著综合性能,超过了未掺杂Sb的原始样品(分别为2.75 J/cm³和80.5%)。相应的陶瓷在疲劳(10⁶次循环)、频率(1~200 Hz)和温度(20~140 °C)方面表现出优异的稳定性。进一步的充放电分析表明,在150 kV/cm下同时实现了高功率密度(89.5