Citroni Rocco, Di Paolo Franco, Livreri Patrizia
Department of Electronic Engineering, University of Rome Tor Vergata, 00133 Roma, Italy.
Department of Engineering, University of Palermo, 90128 Palermo, Italy.
Nanomaterials (Basel). 2022 Jul 19;12(14):2479. doi: 10.3390/nano12142479.
Schottky diode (SD) has seen great improvements in the past few decades and, for many THz applications, it is the most useful device. However, the use and recycling of forms of energy such as solar energy and the infrared thermal radiation that the Earth continuously emits represent one of the most relevant and critical issues for this diode, which is unable to rectify signals above 5 THz. The goal is to develop highly efficient diodes capable of converting radiation from IR spectra to visible ones in direct current (DC). A set of performance criteria is investigated to select some of the most prominent materials required for developing innovative types of electrodes, but also a wide variety of insulator layers is required for the rectification process, which can affect the performance of the device. The current rectifying devices are here reviewed according to the defined performance criteria. The main aim of this review is to provide a wide overview of recent research progress, specific issues, performance, and future directions in THz rectifier technology based on quantum mechanical tunneling and asymmetric structure.
肖特基二极管（SD）在过去几十年中取得了巨大进步，对于许多太赫兹应用而言，它是最有用的器件。然而，太阳能和地球持续发射的红外热辐射等能量形式的利用和回收，是该二极管面临的最相关且关键的问题之一，因为它无法对高于5太赫兹的信号进行整流。目标是开发出高效二极管，能够将红外光谱的辐射直接转换为直流电中的可见光辐射。研究了一组性能标准，以选择开发创新型电极所需的一些最突出材料，但整流过程还需要各种各样的绝缘层，这可能会影响器件性能。本文根据定义的性能标准对当前的整流器件进行了综述。本综述的主要目的是全面概述基于量子力学隧穿和不对称结构的太赫兹整流器技术的最新研究进展、具体问题、性能及未来方向。
