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双螺旋的发现及其对纳米尺度到中尺度晶体结构的影响。

Discovery of Double Helix and Impact on Nanoscale to Mesoscale Crystalline Structures.

作者信息

Narayan Jagdish, Narayan Roger

机构信息

Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907, United States.

Department of Biomedical Engineering, North Carolina State University, Raleigh, North Carolina 27695-7115, United States.

出版信息

ACS Omega. 2022 Jul 18;7(29):25853-25859. doi: 10.1021/acsomega.2c03501. eCollection 2022 Jul 26.

Abstract

Screw dislocations play a significant role in the growth of crystalline structures by providing a continuous source of surface steps which represent available sites for crystal growth. Here, we show that pure screw dislocations can become helical from the absorption of defects (e.g., vacancies) and develop an attractive interaction with another helical dislocation to form a double helix of screw dislocations. These single and double helices of screw dislocations can result in the formation of interesting nanostructures with large Eshelby twists. We have previously proposed the formation of a double helix of screw dislocations to explain large Eshelby twists in crystalline nanostructures (Mater. Res. Lett.2021, 9, 453-457). We now show direct evidence for the formation of a double helix during thermal annealing of screw dislocations. The large Burgers vectors associated with these dislocations are used to explain the presence of large Eshelby twists in PbSe and PbS (NaCl cubic structure) and InP and GeS (wurtzite hexagonal structure) nanowires. These single- and double-helix screw dislocations can also combine to create even larger super Burgers vectors. These large effective Burgers also unravel the mechanism for the formation of nanopipes and micropipes with hollow cores and nanotubes with Eshelby twists in technologically important materials such as SiC, GaN, and ZnO that are utilized in a variety of advanced solid-state devices.

摘要

螺型位错通过提供连续的表面台阶源在晶体结构生长中发挥重要作用,这些表面台阶代表了晶体生长的可用位点。在此,我们表明纯螺型位错可因吸收缺陷(如空位)而变成螺旋状,并与另一个螺旋位错产生吸引相互作用,形成螺型位错的双螺旋结构。这些单螺旋和双螺旋螺型位错可导致形成具有大埃舍尔比扭转的有趣纳米结构。我们之前曾提出螺型位错双螺旋结构的形成来解释晶体纳米结构中的大埃舍尔比扭转(《材料研究快报》2021年,9卷,453 - 457页)。我们现在展示了螺型位错在热退火过程中形成双螺旋结构的直接证据。与这些位错相关的大柏氏矢量被用来解释PbSe和PbS(氯化钠立方结构)以及InP和GeS(纤锌矿六方结构)纳米线中存在的大埃舍尔比扭转。这些单螺旋和双螺旋螺型位错还可结合形成更大的超级柏氏矢量。这些大的有效柏氏矢量也揭示了在诸如SiC、GaN和ZnO等技术上重要的材料中形成具有空心芯的纳米管和微管以及具有埃舍尔比扭转的纳米管的机制,这些材料被用于各种先进的固态器件中。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1b8/9330111/f35ac05db9de/ao2c03501_0001.jpg

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