Liu Guangyin, Liu Shanshan, Chen Hao, Liu Xiaodi, Luo Xinwei, Li Xiu, Ma Jianmin
College of Chemistry and Pharmaceutical Engineering, Nanyang Normal University, Nanyang 473061, China.
School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.
Nanoscale. 2022 Aug 18;14(32):11710-11718. doi: 10.1039/d2nr03187f.
Orthorhombic NbO (T-NbO), a typical intercalation pseudocapacitor, is favorable for realizing high power and energy density for lithium-ion batteries; furthermore, the 2D layered channels perpendicular to the [001] direction facilitate fast Li intercalation in T-NbO. Herein, N-doped T-NbO microflowers (N-NbO) assembled from highly [001]-oriented nanoflakes are rationally synthesized using NHF as the nitrogen source and capping agent. It is found that NH can adsorb on the O-terminated (010) plane of T-NbO N-H⋯O hydrogen bonds, which is highly conducive to the generation of 1D nanorods and the subsequent fusion of the nanorods into highly [001]-oriented nanoflakes. The special growth orientation of the T-NbO nanoflakes endows them with abundant available Li intercalation channels; moreover, the bandgap of N-NbO is narrowed (∼2.91 eV) owing to the doping of N atoms, and the intrinsic electronic conductivity is improved. Accordingly, the intercalation pseudocapacitive behavior of N-NbO is notably promoted and N-NbO exhibits superior Li storage properties, including large discharge capacity (214.7 mA h g at 1C), excellent rate capability (203.7 and 174.6 mA h g at 1 and 20C), and superior cyclic stability (150.7 mA h g at 10C after 1000 cycles). In addition, the LiNiMnCoO//N-NbO full cell delivers outstanding Li storage performance, especially in terms of long-term cycling (126.2 mA h g at 10C after 3500 cycles).
正交晶系的NbO(T-NbO)是一种典型的插层赝电容器,有利于实现锂离子电池的高功率和能量密度;此外,垂直于[001]方向的二维层状通道有利于Li在T-NbO中快速嵌入。在此,以NHF作为氮源和封端剂,合理合成了由高度[001]取向的纳米片组装而成的N掺杂T-NbO微花(N-NbO)。研究发现,NH可以通过N-H⋯O氢键吸附在T-NbO的O端(010)面上,这非常有利于一维纳米棒的生成以及随后纳米棒融合成高度[001]取向的纳米片。T-NbO纳米片的特殊生长取向赋予它们丰富的可用Li嵌入通道;此外,由于N原子的掺杂,N-NbO的带隙变窄(约2.91 eV),本征电子电导率得到提高。因此,N-NbO的插层赝电容行为得到显著促进,N-NbO表现出优异的锂存储性能,包括大放电容量(1C时为214.7 mA h g)、出色的倍率性能(1C和20C时分别为203.7和174.6 mA h g)以及优异的循环稳定性(1000次循环后10C时为150.7 mA h g)。此外,LiNiMnCoO//N-NbO全电池具有出色的锂存储性能,特别是在长期循环方面(3500次循环后10C时为126.2 mA h g)。