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MXene单分子层电子结构的紧束缚模型。

A tight-binding model for the electronic structure of MXene monolayers.

作者信息

Mostafaei Alireza, Heidari Semiromi Ebrahim

机构信息

Department of Physics, University of Kashan, Kashan, 87317-53153, Iran.

出版信息

Nanoscale. 2022 Aug 18;14(32):11760-11769. doi: 10.1039/d2nr00745b.

Abstract

The family of two-dimensional transition metal carbides and nitrides, known as MXenes, has attracted substantial attention in science and technology. We obtain a parameterized minimal tight-binding model to provide an accurate description of both valence and conduction bands of a class of MXene monolayers named MXT (with M = Sc, Zr, Ti; X = C; T = O, F) based on the band structures obtained within the framework of density functional theory. It is shown that the next nearest-neighbor 13-band p3d5 model is fairly sufficient to describe the electronic structure of these systems over a wide energy range. The obtained hopping and Slater-Koster parameters can be used to study the physical properties of MXene-based materials and nanostructures in the framework of the tight-binding model.

摘要

二维过渡金属碳化物和氮化物家族,即MXenes,在科学技术领域引起了广泛关注。基于密度泛函理论框架下获得的能带结构,我们得到了一个参数化的最小紧束缚模型,以准确描述一类名为MXT的MXene单层的价带和导带(其中M = Sc、Zr、Ti;X = C;T = O、F)。结果表明,次近邻13带p3d5模型在很宽的能量范围内足以描述这些体系的电子结构。所获得的跳跃参数和Slater-Koster参数可用于在紧束缚模型框架下研究基于MXene的材料和纳米结构的物理性质。

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