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未掺杂和掺杂的双(乙撑二硫)四硒富瓦烯(BETS)(CHSSe)分子的电子、非线性光学、光电和热力学性质:首次使用从头算研究

Electronic, non-linear optical, optoelectronic, and thermodynamic properties of undoped and doped bis (ethylenedithio) tetraselenafulvalene (BETS) (CHSSe) molecule: first study using ab initio investigation.

作者信息

Ntieche Zounedou, Abe Martin Thierry Ottou, Freidy Olinga Mbala Gaspard, Ejuh Geh Wilson, Ndjaka Jean Marie Bienvenu

机构信息

Faculty of Science, Department of Physics, University of Yaounde I, P.M.B 812, Yaounde, Cameroon.

Local Materials Promotion Authority (MIPROMALO), P.O. Box 2396, Yaounde, Cameroon.

出版信息

J Mol Model. 2022 Aug 15;28(9):256. doi: 10.1007/s00894-022-05250-4.

Abstract

We have performed the ab initio calculation of the undoped and doped molecules bis (ethylenedithio) tetraselenafulvalene (BETS). Carbone (C) atoms have been substituted by Boron (B) to investigate their effects on the electronic structure and nonlinear optical, optoelectronic, and thermodynamic properties of BETS molecule. The RHF and hybrid density functional theories (WB97XD, B3PW91, and B3LYP) methods were applied, using the cc-pVDZ basis set. We found that the energy gap (Egap) of the doped molecules are respectively 2.476 eV and 2.569 eV for CBHSSe and CBHSSe with B3LYP/cc-pVDZ basis set, lower than one of the undoped molecule (3.316 eV). The significant increase values of polarizability (˂α˃) and first order hyperpolarizability (β) of the doped compounds, especially in CBHSSe (< α >  = 4.5315 × 10 esu, β = 22,672.27 × 10 esu and < α >  = 4.518 × 10 esu, β = 23,657.43 × 10 esu respectively for B3LYP and B3PW91) compared to those of the undoped molecule (< α >  = 4.3602 × 10 esu, β = 1290.38 × 10 esu, and < α >  = 4.518 × 10 esu) show that the new molecules have a good nonlinear optical property. Results suggest that these molecules doped with boron are a potential candidate as semiconductors compounds and nonlinear optical materials.

摘要

我们对未掺杂和掺杂的双(亚乙基二硫)四硒富瓦烯(BETS)分子进行了从头算计算。用硼(B)取代了碳原子,以研究其对BETS分子的电子结构、非线性光学、光电和热力学性质的影响。采用了RHF和混合密度泛函理论(WB97XD、B3PW91和B3LYP)方法,并使用cc-pVDZ基组。我们发现,对于CBHSSe和CBHSSe,在B3LYP/cc-pVDZ基组下,掺杂分子的能隙(Egap)分别为2.476 eV和2.569 eV,低于未掺杂分子的能隙(3.316 eV)。与未掺杂分子(<α>=4.3602×10 esu,β=1290.38×10 esu,<α>=4.518×10 esu)相比,掺杂化合物的极化率(<α>)和一阶超极化率(β)显著增加,尤其是在CBHSSe中(对于B3LYP和B3PW91,<α>=4.5315×10 esu,β=22672.27×10 esu和<α>=4.518×10 esu,β=23657.43×10 esu),这表明新分子具有良好的非线性光学性质。结果表明,这些硼掺杂分子是半导体化合物和非线性光学材料的潜在候选者。

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