Maraeva Evgeniya, Maximov Alexander, Permiakov Nikita, Moshnikov Vyacheslav
Department of Micro-and Nanoelectronics, Faculty of Electronics, Saint-Petersburg Electrotechnical University «LETI», 5, pr. Popova, 197022 Saint Petersburg, Russia.
Micromachines (Basel). 2022 Jul 29;13(8):1209. doi: 10.3390/mi13081209.
Heat treatment in an oxygen-containing medium is a necessary procedure in the technology of forming photodetectors and emitters based on lead chalcogenides. Lead chalcogenide layers (PbS, PbSe) were prepared via a chemical bath deposition method. Surface oxidation of lead chalcogenide layers was analyzed using X-ray diffraction and Raman spectroscopy methods, and thermodynamic analysis of the oxidation of PbSe and PbS layers was also performed. The calculated phase diagrams from 20 °C to 500 °C showed good agreement with the experimental results. According to the thermodynamic analysis, the oxidation products depend on the initial composition of the layers and temperature of the annealing. In some cases, the formation of a separate metallic phase Pb is possible along with the formation of lead oxide PbO and other oxides. The performed thermodynamic analysis makes it possible to substantiate the two-stage annealing temperature regimes which ensure an increase in the speed of photodetectors.
在含氧介质中进行热处理是基于硫属铅化物形成光探测器和发射器技术中的必要步骤。硫属铅化物层(PbS、PbSe)通过化学浴沉积法制备。使用X射线衍射和拉曼光谱方法分析了硫属铅化物层的表面氧化情况,并且还对PbSe和PbS层的氧化进行了热力学分析。从20°C到500°C计算得到的相图与实验结果吻合良好。根据热力学分析,氧化产物取决于层的初始组成和退火温度。在某些情况下,除了形成氧化铅PbO和其他氧化物外,还可能形成单独的金属相Pb。所进行的热力学分析使得能够证实确保光探测器速度提高的两阶段退火温度制度。