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具有高导电性并可实现有机非易失性光电存储器的六苯并苝的稳定自由基阳离子

Robust Radical Cations of Hexabenzoperylene Exhibiting High Conductivity and Enabling an Organic Nonvolatile Optoelectronic Memory.

作者信息

Wang Yujing, Gong Qi, Pun Sai Ho, Lee Hung Kay, Zhou Yaoqiang, Xu Jianbin, Miao Qian

机构信息

Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.

Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.

出版信息

J Am Chem Soc. 2022 Sep 14;144(36):16612-16619. doi: 10.1021/jacs.2c06835. Epub 2022 Aug 31.

DOI:10.1021/jacs.2c06835
PMID:36043840
Abstract

Herein, we report robust π-conjugated radical cations resulting from the oxidation of hexabenzoperylene (HBP) derivatives, HBP-B and HBP-H, which have butyl and hexyl groups, respectively, attached to the same twisted double helicene π-backbone. The radical cation of HBP-B was successfully crystallized in the form of hexafluorophosphate, which exhibited conductivity as high as 1.32 ± 0.04 S cm. Photochemical oxidation of HBP-H by molecular oxygen led to the formation of its radical cation in the solid state, as found with different techniques. This allowed the organic field effect transistor of HBP-H to function as a nonvolatile optoelectronic memory, with the memory switching contrast above 10 and long-term stability without using a floating gate, an electret layer, or photochromic molecules.

摘要

在此,我们报道了由六苯并苝(HBP)衍生物HBP - B和HBP - H氧化产生的稳定的π共轭自由基阳离子,它们分别具有连接在相同扭曲双螺旋烯π骨架上的丁基和己基。HBP - B的自由基阳离子成功地以六氟磷酸盐的形式结晶,其电导率高达1.32±0.04 S/cm。通过不同技术发现,分子氧对HBP - H的光化学氧化导致其在固态下形成自由基阳离子。这使得HBP - H的有机场效应晶体管能够用作非易失性光电器件存储器,其存储开关对比度超过10,并且在不使用浮栅、驻极体层或光致变色分子的情况下具有长期稳定性。

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