Huang Bohr-Ran, Saravanan Adhimoorthy, Kathiravan Deepa, Chiang Ting-Yen, Yang Wen-Luh
Graduate Institute of Electro-Optical Engineering and Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan.
Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan.
ACS Appl Mater Interfaces. 2022 Sep 14;14(36):41481-41488. doi: 10.1021/acsami.2c06291. Epub 2022 Sep 1.
Monitoring the hydrogen gas (H) level is highly important in a wide range of applications. Oxide-carbon hybrids have emerged as a promising material for the fabrication of gas sensors for this purpose. Here, for the first time, graphitic carbon nitride (g-CN)-doped zinc oxide nanorods (ZNRs) have been grown on silicon (Si) pyramid-shaped surfaces by the facile hydrothermal reaction method. The systematic material analyses have revealed that the g-CN nanostructures (NS) have been consistently incorporated into the ZNRs on the pyramidal silicon (Py-Si) surface (g-CN-ZNRs/Py-Si). The combined properties of the present structure exhibit an excellent sensitivity (∼53%) under H gas exposure, better than that of bare ZNRs (12%). The results revealed that the fine incorporation of g-CN into ZNRs on the Py-Si surface improves the H gas sensing properties when compared to that of the planar silicon (Pl-Si) surface. The doping of g-CN into ZNRs increases the electrical conductivity through its graphene-like edges (due to the formation of delocalized bonds in g-CN during carbon self-doping), as revealed by FESEM images. In addition, the presence of defects in g-CN induces the gas adsorption properties of ZnO through its active sites. Moreover, the integration of the 1D structure (g-CN-ZNRs) into a 3D pyramidal structure opens up new opportunities for low-cost H gas sensing at room temperature. It is an easy way to enhance the gas sensing properties of ZNRs at room temperature, which is desirable for practical H sensor applications.
在广泛的应用中，监测氢气（H）水平非常重要。氧化物 - 碳杂化物已成为制造用于此目的气体传感器的一种有前途的材料。在此，首次通过简便的水热反应方法在硅（Si）金字塔形表面上生长了石墨相氮化碳（g-CN）掺杂的氧化锌纳米棒（ZNRs）。系统的材料分析表明，g-CN纳米结构（NS）已持续掺入金字塔形硅（Py-Si）表面上的ZNRs中（g-CN-ZNRs/Py-Si）。当前结构的综合性能在氢气暴露下表现出优异的灵敏度（约53%），优于裸ZNRs（12%）。结果表明，与平面硅（Pl-Si）表面相比，将g-CN精细掺入Py-Si表面上的ZNRs中可改善氢气传感性能。如FESEM图像所示，g-CN掺入ZNRs中通过其类似石墨烯的边缘增加了电导率（由于在碳自掺杂过程中g-CN中形成了离域键）。此外，g-CN中缺陷的存在通过其活性位点诱导了ZnO的气体吸附特性。而且，将一维结构（g-CN-ZNRs）集成到三维金字塔结构中为室温下低成本氢气传感开辟了新机会。这是在室温下增强ZNRs气体传感性能的一种简便方法，这对于实际氢气传感器应用是可取的。
